MJD31CT4
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- Mfr.Part #
- MJD31CT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A DPAK
- Stock
- 16,492
- In Stock ：
- 16,492
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Base Part Number :
- MJD31
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Length :
- 6.6mm
- Collector Emitter Breakdown Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 100V
- Weight :
- 4.535924g
- Power Dissipation :
- 15W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Height :
- 2.4mm
- Max Collector Current :
- 3A
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Width :
- 6.2mm
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 15W
- Voltage - Rated DC :
- 100V
- hFE Min :
- 20
- Collector Emitter Saturation Voltage :
- 1.2V
- Current - Collector Cutoff (Max) :
- 50μA
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 100V
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Current Rating :
- 3A
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MJD31CT4
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NPN 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD31CT4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 3A volts.
MJD31CT4 Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
MJD31CT4 Applications
There are a lot of STMicroelectronics
MJD31CT4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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