MJD31CRL
- Mfr.Part #
- MJD31CRL
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A DPAK
- Stock
- 3,928
- In Stock :
- 3,928
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transition Frequency :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 5V
- HTS Code :
- 8541.29.00.95
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Number of Pins :
- 3
- Surface Mount :
- yes
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 3MHz
- Max Collector Current :
- 3A
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- 240
- Case Connection :
- COLLECTOR
- Base Part Number :
- MJD31
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- Current Rating :
- 3A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Voltage (VCEO) :
- 1.2V
- Voltage - Rated DC :
- 100V
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e0
- Collector Base Voltage (VCBO) :
- 100V
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- hFE Min :
- 25
- Collector Emitter Saturation Voltage :
- 1.2V
- Published :
- 2009
- Lead Free :
- Contains Lead
- Current - Collector Cutoff (Max) :
- 50μA
- Number of Terminations :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Max Power Dissipation :
- 1.56W
- Reach Compliance Code :
- not_compliant
- Datasheets
- MJD31CRL

NPN -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD31CRL Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 3A 4V.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 375mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
MJD31CRL Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31CRL Applications
There are a lot of ON Semiconductor
MJD31CRL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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