MJD31CQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

1μA

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Transition Frequency :

3MHz

Max Power Dissipation :

15W

Number of Terminations :

2

Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Transistor Type :

NPN

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Power - Max :

15W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

13 Weeks

Number of Elements :

1

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

1.2V

Polarity/Channel Type :

NPN

Mount :

Surface Mount

Reference Standard :

AEC-Q101

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Max Collector Current :

3A

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

100V

Case Connection :

COLLECTOR

Published :

2005

Frequency - Transition :

3MHz

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Additional Feature :

High Reliability

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Max Breakdown Voltage :

100V

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)