MJD31CITU
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- Mfr.Part #
- MJD31CITU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A IPAK
- Stock
- 40,818
- In Stock ：
- 40,818
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 3MHz
- Voltage - Rated DC :
- 100V
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Length :
- 6.8mm
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Max Collector Current :
- 3A
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Collector Emitter Saturation Voltage :
- 1.2V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Current Rating :
- 3A
- hFE Min :
- 10
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 50μA
- Transition Frequency :
- 3MHz
- Base Part Number :
- MJD31
- Width :
- 2.5mm
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Max Power Dissipation :
- 1.56W
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 100V
- Height :
- 6.3mm
- Frequency :
- 3MHz
- Weight :
- 343.08mg
- Power Dissipation :
- 1.56W
- Datasheets
- MJD31CITU
MJD31CITU Documents
NPN 150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD31CITU Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In this part, there is a transition frequency of 3MHz.The maximum collector current is 3A volts.
MJD31CITU Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31CITU Applications
There are a lot of ON Semiconductor
MJD31CITU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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