MJ21195G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

4MHz

hFE Min :

25

Collector Emitter Voltage (VCEO) :

250V

Element Configuration :

Single

Terminal Form :

PIN/PEG

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.35mm

Collector Emitter Breakdown Voltage :

250V

Current Rating :

-16A

ECCN Code :

EAR99

Packaging :

Tray

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Terminal Position :

BOTTOM

Case Connection :

COLLECTOR

Transistor Type :

PNP

Power Dissipation :

250W

Current - Collector Cutoff (Max) :

100μA

Number of Pins :

2

Collector Emitter Saturation Voltage :

1.4V

Weight :

4.535924g

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 8A 5V

Number of Terminations :

2

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Frequency :

4MHz

RoHS Status :

ROHS3 Compliant

Max Collector Current :

16A

Factory Lead Time :

5 Weeks

Pin Count :

2

Gain Bandwidth Product :

4MHz

Height :

6.35mm

Collector Base Voltage (VCBO) :

400V

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

4V @ 3.2A, 16A

Number of Elements :

1

Polarity/Channel Type :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Pbfree Code :

yes

Width :

6.35mm

Voltage - Rated DC :

-250V

Operating Temperature :

-65°C~200°C TJ

Surface Mount :

No

Max Power Dissipation :

250W

Package / Case :

TO-204AA, TO-3

Published :

2006