MJ21193G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

4MHz

Lead Free :

Lead Free

Max Power Dissipation :

250W

Emitter Base Voltage (VEBO) :

5V

Element Configuration :

Single

Transistor Type :

PNP

Transition Frequency :

4MHz

Voltage - Rated DC :

-250V

Collector Base Voltage (VCBO) :

400V

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

REACH SVHC :

No SVHC

Number of Pins :

2

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

250V

Package / Case :

TO-204AA, TO-3

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

1.4V

Pbfree Code :

yes

Gain Bandwidth Product :

4MHz

JESD-609 Code :

e3

Power Dissipation :

250W

Vce Saturation (Max) @ Ib, Ic :

4V @ 3.2A, 16A

Number of Terminations :

2

Width :

26.67mm

ECCN Code :

EAR99

Radiation Hardening :

No

Factory Lead Time :

5 Weeks

Pin Count :

2

Length :

39.37mm

Weight :

4.535924g

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 8A 5V

Published :

2005

Packaging :

Tray

Operating Temperature :

-65°C~200°C TJ

Current Rating :

-16A

Collector Emitter Breakdown Voltage :

250V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Max Collector Current :

16A

Case Connection :

COLLECTOR

Polarity/Channel Type :

PNP

hFE Min :

25

Surface Mount :

No

Current - Collector Cutoff (Max) :

100μA

Transistor Application :

AMPLIFIER

Number of Elements :

1

Height :

8.51mm

Terminal Form :

PIN/PEG