MJ21196G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

AMPLIFIER

Published :

2006

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Packaging :

Tray

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

400V

Number of Pins :

2

JESD-609 Code :

e3

Pin Count :

2

Transition Frequency :

4MHz

Max Power Dissipation :

250W

ECCN Code :

EAR99

Element Configuration :

Single

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Max Collector Current :

16A

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

NPN

Power Dissipation :

250W

Number of Terminations :

2

Collector Emitter Voltage (VCEO) :

250V

Factory Lead Time :

6 Weeks

Vce Saturation (Max) @ Ib, Ic :

4V @ 3.2A, 16A

Width :

6.35mm

Number of Elements :

1

Height :

6.35mm

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

5V

Surface Mount :

No

Length :

6.35mm

Collector Emitter Breakdown Voltage :

250V

hFE Min :

25

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 8A 5V

Frequency :

4MHz

Current Rating :

16A

Terminal Form :

PIN/PEG

Gain Bandwidth Product :

4MHz

Operating Temperature :

-65°C~200°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

250V

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

1.4V

Current - Collector Cutoff (Max) :

100μA

Weight :

4.535924g

Radiation Hardening :

No

Package / Case :

TO-204AA, TO-3