MJ15022G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

4MHz

Weight :

4.535924g

Mounting Type :

Through Hole

Power Dissipation :

250W

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Package / Case :

TO-204AA, TO-3

Radiation Hardening :

No

Voltage - Rated DC :

200V

Current - Collector Cutoff (Max) :

500μA

Vce Saturation (Max) @ Ib, Ic :

4V @ 3.2A, 16A

Collector Emitter Voltage (VCEO) :

200V

Terminal Position :

BOTTOM

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Length :

39.37mm

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

250W

Lead Free :

Lead Free

Operating Temperature :

-65°C~200°C TJ

Published :

2006

hFE Min :

15

Packaging :

Tray

Transistor Type :

NPN

Surface Mount :

No

Height :

8.51mm

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Terminal Form :

PIN/PEG

REACH SVHC :

No SVHC

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 8A 4V

Current Rating :

16A

Transistor Application :

AMPLIFIER

Factory Lead Time :

2 Weeks

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

1.4V

ECCN Code :

EAR99

Pin Count :

2

Case Connection :

COLLECTOR

Collector Base Voltage (VCBO) :

350V

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

NPN

Max Collector Current :

16A

Gain Bandwidth Product :

4MHz

Number of Pins :

2

Width :

26.67mm

Frequency :

4MHz