MJ15022G
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- Mfr.Part #
- MJ15022G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 200V 16A TO204
- Stock
- 152
- In Stock ：
- 152
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 15
- Gain Bandwidth Product :
- 4MHz
- Collector Emitter Breakdown Voltage :
- 200V
- Max Collector Current :
- 16A
- Width :
- 26.67mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 8A 4V
- Operating Temperature :
- -65°C~200°C TJ
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 200V
- Packaging :
- Tray
- Height :
- 8.51mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- PIN/PEG
- Terminal Position :
- BOTTOM
- Published :
- 2006
- Power Dissipation :
- 250W
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Pin Count :
- 2
- Current - Collector Cutoff (Max) :
- 500μA
- Current Rating :
- 16A
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 1.4V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Max Power Dissipation :
- 250W
- REACH SVHC :
- No SVHC
- Frequency :
- 4MHz
- Surface Mount :
- No
- Collector Emitter Voltage (VCEO) :
- 200V
- Length :
- 39.37mm
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 350V
- Number of Terminations :
- 2
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Weight :
- 4.535924g
- Number of Pins :
- 2
- Transition Frequency :
- 4MHz
- Mounting Type :
- Through Hole
- Package / Case :
- TO-204AA, TO-3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 3.2A, 16A
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- MJ15022G
MJ15022G Documents
NPN -65°C~200°C TJ 500μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ15022G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 8A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 3.2A, 16A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 16A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 16A volts at Single BJT transistors maximum.
MJ15022G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz
MJ15022G Applications
There are a lot of ON Semiconductor
MJ15022G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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