MJ15003

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN

Gain Bandwidth Product :

2MHz

Surface Mount :

No

JESD-609 Code :

e3

ECCN Code :

EAR99

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

20A

Packaging :

Tray

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 5A 2V

Frequency :

2MHz

Collector Emitter Voltage (VCEO) :

140V

Case Connection :

COLLECTOR

Current Rating :

20A

Power Dissipation :

250W

Height :

8.51mm

Width :

26.67mm

Collector Emitter Saturation Voltage :

1V

Package / Case :

TO-204AA, TO-3

Number of Terminations :

2

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

1V @ 500mA, 5A

Transistor Type :

NPN

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Pbfree Code :

yes

Published :

2002

Weight :

4.535924g

Collector Base Voltage (VCBO) :

140V

Voltage - Rated DC :

140V

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Transition Frequency :

2MHz

Collector Emitter Breakdown Voltage :

140V

Terminal Form :

PIN/PEG

Factory Lead Time :

5 Weeks

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

hFE Min :

25

Operating Temperature :

-65°C~200°C TJ

Number of Pins :

2

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pin Count :

2

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

250μA

Length :

39.37mm

Number of Elements :

1

Max Power Dissipation :

250W