MJ15004G
- Mfr.Part #
- MJ15004G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP 140V 20A TO204
- Stock
- 651
- In Stock :
- 651
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -140V
- Contact Plating :
- Tin
- Number of Terminations :
- 2
- Height :
- 8.51mm
- Number of Pins :
- 2
- Package / Case :
- TO-204AA, TO-3
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 250μA
- Transition Frequency :
- 2MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 140V
- Collector Emitter Breakdown Voltage :
- 140V
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- PNP
- Max Collector Current :
- 20A
- hFE Min :
- 25
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 1V
- Length :
- 39.37mm
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2005
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Surface Mount :
- No
- Packaging :
- Tray
- Max Power Dissipation :
- 250W
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 140V
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 2MHz
- Frequency :
- 2MHz
- Power Dissipation :
- 250W
- Pin Count :
- 2
- Current Rating :
- -20A
- Mounting Type :
- Through Hole
- Width :
- 26.67mm
- Operating Temperature :
- -65°C~200°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 5A 2V
- Weight :
- 4.535924g
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- PIN/PEG
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MJ15004G

PNP -65°C~200°C TJ 250μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15004G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 5A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -20A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 2MHz.During maximum operation, collector current can be as low as 20A volts.
MJ15004G Features
the DC current gain for this device is 25 @ 5A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -20A
a transition frequency of 2MHz
MJ15004G Applications
There are a lot of ON Semiconductor
MJ15004G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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