MJ15004G
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- Mfr.Part #
- MJ15004G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP 140V 20A TO204
- Stock
- 651
- In Stock ：
- 651
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 2
- Current Rating :
- -20A
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -140V
- Polarity/Channel Type :
- PNP
- Terminal Position :
- BOTTOM
- Width :
- 26.67mm
- Operating Temperature :
- -65°C~200°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 5A 2V
- Frequency :
- 2MHz
- Terminal Form :
- PIN/PEG
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 250μA
- Packaging :
- Tray
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Transition Frequency :
- 2MHz
- Height :
- 8.51mm
- Collector Emitter Saturation Voltage :
- 1V
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Pin Count :
- 2
- Number of Elements :
- 1
- Weight :
- 4.535924g
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-204AA, TO-3
- Max Power Dissipation :
- 250W
- Transistor Application :
- AMPLIFIER
- Surface Mount :
- No
- Max Collector Current :
- 20A
- Collector Emitter Voltage (VCEO) :
- 140V
- Number of Pins :
- 2
- Lead Free :
- Lead Free
- hFE Min :
- 25
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 250W
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Collector Emitter Breakdown Voltage :
- 140V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 140V
- Length :
- 39.37mm
- Gain Bandwidth Product :
- 2MHz
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Datasheets
- MJ15004G
MJ15004G Documents
PNP -65°C~200°C TJ 250μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15004G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 5A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -20A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 2MHz.During maximum operation, collector current can be as low as 20A volts.
MJ15004G Features
the DC current gain for this device is 25 @ 5A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -20A
a transition frequency of 2MHz
MJ15004G Applications
There are a lot of ON Semiconductor
MJ15004G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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