MJ15015G
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- Mfr.Part #
- MJ15015G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 15A TO204
- Stock
- 5,804
- In Stock ：
- 5,804
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 120V
- Pin Count :
- 2
- Factory Lead Time :
- 12 Weeks
- Mounting Type :
- Through Hole
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Height :
- 8.51mm
- Length :
- 39.37mm
- Published :
- 2006
- Terminal Form :
- PIN/PEG
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Package / Case :
- TO-204AA, TO-3
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 7A, 15A
- Max Collector Current :
- 15A
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 120V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Current Rating :
- 15A
- REACH SVHC :
- No SVHC
- Weight :
- 4.535924g
- Max Power Dissipation :
- 180W
- Power Dissipation :
- 180W
- Width :
- 26.67mm
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector Cutoff (Max) :
- 100μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 1.1V
- Collector Base Voltage (VCBO) :
- 200V
- hFE Min :
- 10
- Collector Emitter Breakdown Voltage :
- 120V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 0.8MHz
- Frequency :
- 6MHz
- Number of Pins :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Gain Bandwidth Product :
- 6MHz
- Element Configuration :
- Single
- Packaging :
- Tray
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 4A 2V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -65°C~200°C TJ
- Datasheets
- MJ15015G
NPN -65°C~200°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15015G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 4A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 7A, 15A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.8MHz.During maximum operation, collector current can be as low as 15A volts.
MJ15015G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz
MJ15015G Applications
There are a lot of ON Semiconductor
MJ15015G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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