MJ15022
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- Mfr.Part #
- MJ15022
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 200V 16A TO3
- Stock
- 37,343
- In Stock ：
- 37,343
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 200V
- Power Dissipation :
- 250W
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 200V
- Collector Base Voltage (VCBO) :
- 350V
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 3.2A, 16A
- Case Connection :
- COLLECTOR
- Height :
- 8.51mm
- Frequency :
- 4MHz
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 4MHz
- Transistor Type :
- NPN
- Terminal Form :
- PIN/PEG
- Packaging :
- Tray
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 500μA
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Transition Frequency :
- 4MHz
- Collector Emitter Saturation Voltage :
- 1.4V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 200V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Length :
- 39.37mm
- Current Rating :
- 16A
- Max Power Dissipation :
- 250W
- Max Collector Current :
- 16A
- Factory Lead Time :
- 2 Weeks
- Package / Case :
- TO-204AA, TO-3
- Number of Pins :
- 2
- Width :
- 26.67mm
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Published :
- 2006
- Operating Temperature :
- -65°C~200°C TJ
- Polarity/Channel Type :
- NPN
- hFE Min :
- 15
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 8A 4V
- Datasheets
- MJ15022
NPN -65°C~200°C TJ 500μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ15022G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 8A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 3.2A, 16A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 16A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 16A volts at Single BJT transistors maximum.
MJ15022G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz
MJ15022G Applications
There are a lot of ON Semiconductor
MJ15022G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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