MJ15016
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- Mfr.Part #
- MJ15016
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP 120V 15A TO3
- Stock
- 85
- In Stock ：
- 85
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Current Rating :
- -15A
- Gain Bandwidth Product :
- 18MHz
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 200V
- Number of Elements :
- 1
- Terminal Form :
- PIN/PEG
- Mounting Type :
- Through Hole
- Published :
- 2006
- Collector Emitter Breakdown Voltage :
- 120V
- Package / Case :
- TO-204AA, TO-3
- hFE Min :
- 10
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 4.535924g
- Length :
- 39.37mm
- Surface Mount :
- No
- Contact Plating :
- Tin
- Max Power Dissipation :
- 180W
- Number of Terminations :
- 2
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 120V
- Number of Pins :
- 2
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 4A 2V
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Power - Max :
- 115W
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -120V
- Max Collector Current :
- 15A
- Pin Count :
- 2
- JESD-609 Code :
- e3
- Power Dissipation :
- 180W
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 7A, 15A
- ECCN Code :
- EAR99
- Transition Frequency :
- 2.2MHz
- Operating Temperature :
- -65°C~200°C TJ
- REACH SVHC :
- No SVHC
- Frequency :
- 18MHz
- Width :
- 26.67mm
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Saturation Voltage :
- 1.1V
- Element Configuration :
- Single
- Height :
- 8.51mm
- Radiation Hardening :
- No
- Packaging :
- Tray
- Factory Lead Time :
- 2 Weeks
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 100μA
- Datasheets
- MJ15016
MJ15016 Documents
PNP -65°C~200°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15016G Overview
In this device, the DC current gain is 10 @ 4A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 5V @ 7A, 15A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -15A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2.2MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
MJ15016G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 2.2MHz
MJ15016G Applications
There are a lot of ON Semiconductor
MJ15016G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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