MJ15016
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- Mfr.Part #
- MJ15016
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP 120V 15A TO3
- Stock
- 85
- In Stock ：
- 85
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 4.535924g
- Collector Emitter Saturation Voltage :
- 1.1V
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 180W
- Power - Max :
- 115W
- Voltage - Rated DC :
- -120V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -65°C~200°C TJ
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Surface Mount :
- No
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 7A, 15A
- Transition Frequency :
- 2.2MHz
- Packaging :
- Tray
- hFE Min :
- 10
- Pin Count :
- 2
- ECCN Code :
- EAR99
- Max Collector Current :
- 15A
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 2 Weeks
- Radiation Hardening :
- No
- Width :
- 26.67mm
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- REACH SVHC :
- No SVHC
- Current Rating :
- -15A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 18MHz
- Gain Bandwidth Product :
- 18MHz
- Number of Terminations :
- 2
- Published :
- 2006
- Number of Pins :
- 2
- Height :
- 8.51mm
- Package / Case :
- TO-204AA, TO-3
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Base Voltage (VCBO) :
- 200V
- Collector Emitter Breakdown Voltage :
- 120V
- Element Configuration :
- Single
- Terminal Form :
- PIN/PEG
- Power Dissipation :
- 180W
- Collector Emitter Voltage (VCEO) :
- 120V
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 4A 2V
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Position :
- BOTTOM
- Length :
- 39.37mm
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Datasheets
- MJ15016
PNP -65°C~200°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15016G Overview
In this device, the DC current gain is 10 @ 4A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 5V @ 7A, 15A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -15A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2.2MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
MJ15016G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 2.2MHz
MJ15016G Applications
There are a lot of ON Semiconductor
MJ15016G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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