MJ14002G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

60A

Collector Emitter Breakdown Voltage :

80V

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Height :

8.51mm

Power Dissipation :

300W

Collector Base Voltage (VCBO) :

80V

Collector Emitter Voltage (VCEO) :

80V

Transistor Application :

SWITCHING

Published :

2005

Operating Temperature :

-65°C~200°C TJ

Mounting Type :

Through Hole

Transistor Type :

NPN

Max Power Dissipation :

300W

Package / Case :

TO-204AE

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

3V @ 12A, 60A

Current - Collector Cutoff (Max) :

1mA

ECCN Code :

EAR99

Number of Pins :

2

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

1V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Emitter Base Voltage (VEBO) :

5V

REACH SVHC :

No SVHC

Terminal Position :

BOTTOM

Pin Count :

2

Current Rating :

60A

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

No

Width :

26.67mm

Length :

38.86mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form :

PIN/PEG

Case Connection :

COLLECTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 50A 3V

Element Configuration :

Single

Packaging :

Tray

Number of Terminations :

2

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

80V

Number of Elements :

1

JESD-609 Code :

e1

Factory Lead Time :

2 Weeks

hFE Min :

30