MJ14002G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e1

Transistor Application :

SWITCHING

Number of Elements :

1

Packaging :

Tray

Power Dissipation :

300W

Published :

2005

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

1mA

Operating Temperature :

-65°C~200°C TJ

Collector Emitter Breakdown Voltage :

80V

Max Power Dissipation :

300W

Max Collector Current :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Collector Emitter Saturation Voltage :

1V

Factory Lead Time :

2 Weeks

ECCN Code :

EAR99

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 50A 3V

hFE Min :

30

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Voltage - Rated DC :

80V

Pin Count :

2

Length :

38.86mm

Radiation Hardening :

No

Width :

26.67mm

Height :

8.51mm

Package / Case :

TO-204AE

Element Configuration :

Single

Case Connection :

COLLECTOR

REACH SVHC :

No SVHC

Current Rating :

60A

Surface Mount :

No

Collector Emitter Voltage (VCEO) :

80V

Terminal Form :

PIN/PEG

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

NPN

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pbfree Code :

yes

Number of Pins :

2

Collector Base Voltage (VCBO) :

80V

Vce Saturation (Max) @ Ib, Ic :

3V @ 12A, 60A