MJ14001G

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Mfr.Part #
MJ14001G
Manufacturer
onsemi
Package / Case
TO-204AE
Datasheet
Download
Description
TRANS PNP 60V 60A TO204
Stock
8,729
In Stock :
8,729

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
60A
Number of Terminations :
2
Max Power Dissipation :
300W
Current Rating :
-60A
Transistor Element Material :
SILICON
Pin Count :
2
Qualification Status :
Not Qualified
Packaging :
Tray
Package / Case :
TO-204AE
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
60V
Vce Saturation (Max) @ Ib, Ic :
3V @ 12A, 60A
Time@Peak Reflow Temperature-Max (s) :
40
Lead Free :
Lead Free
Number of Pins :
2
Surface Mount :
No
Terminal Position :
BOTTOM
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Current - Collector Cutoff (Max) :
1mA
Polarity/Channel Type :
PNP
Terminal Form :
PIN/PEG
Collector Emitter Saturation Voltage :
1V
Operating Temperature :
-65°C~200°C TJ
hFE Min :
30
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 day ago)
Collector Emitter Voltage (VCEO) :
3V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
RoHS Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 50A 3V
Voltage - Rated DC :
-60V
Peak Reflow Temperature (Cel) :
260
ECCN Code :
EAR99
Mounting Type :
Through Hole
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
60V
Number of Elements :
1
Published :
2005
Transistor Type :
PNP
Power Dissipation :
300W
Emitter Base Voltage (VEBO) :
5V
Case Connection :
COLLECTOR
Element Configuration :
Single
JESD-609 Code :
e1
Datasheets
MJ14001G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJ14001G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-204AE, Number of Pins:2, Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, MJ14001G pinout, MJ14001G datasheet PDF, MJ14001G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJ14001G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJ14001G


PNP -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON PNP TO-204AE Tray Through Hole

MJ14001G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 15 @ 50A 3V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 60A volts.

MJ14001G Features


the DC current gain for this device is 15 @ 50A 3V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 12A, 60A
the emitter base voltage is kept at 5V
the current rating of this device is -60A


MJ14001G Applications


There are a lot of ON Semiconductor
MJ14001G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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