MJ14002
- Mfr.Part #
- MJ14002
- Manufacturer
- onsemi
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- TRANS PWR NPN 60A 80V TO3
- Stock
- 29,656
- In Stock :
- 29,656
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 80V
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Length :
- 38.86mm
- Current Rating :
- 60A
- Collector Emitter Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 50A 3V
- REACH SVHC :
- No SVHC
- Height :
- 8.51mm
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Application :
- SWITCHING
- Published :
- 2005
- Terminal Form :
- PIN/PEG
- Number of Pins :
- 2
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 1mA
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 300W
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 300W
- Max Collector Current :
- 60A
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -65°C~200°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tray
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 12A, 60A
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e1
- hFE Min :
- 30
- Pin Count :
- 2
- Package / Case :
- TO-204AE
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Width :
- 26.67mm
- Number of Terminations :
- 2
- Datasheets
- MJ14002

NPN -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON NPN TO-204AE Tray Through Hole
MJ14002G Overview
In this device, the DC current gain is 15 @ 50A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 12A, 60A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (60A).Maximum collector currents can be below 60A volts.
MJ14002G Features
the DC current gain for this device is 15 @ 50A 3V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 12A, 60A
the emitter base voltage is kept at 5V
the current rating of this device is 60A
MJ14002G Applications
There are a lot of ON Semiconductor
MJ14002G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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