MD2009DFX
- Mfr.Part #
- MD2009DFX
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOWATT218FX
- Datasheet
- Download
- Description
- TRANS NPN 700V 10A TO3PF
- Stock
- 7,352
- In Stock :
- 7,352
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 58W
- Package / Case :
- ISOWATT218FX
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Base Part Number :
- MD2009
- Continuous Collector Current :
- 10A
- Current - Collector Cutoff (Max) :
- 200μA
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 1.4A, 5.5A
- Collector Emitter Voltage (VCEO) :
- 700V
- Additional Feature :
- BUILT-IN BIAS RESISTORS
- Transistor Application :
- AMPLIFIER
- Case Connection :
- Isolated
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 5.5A 5V
- Element Configuration :
- Single
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 7V
- Pin Count :
- 3
- Mount :
- Through Hole
- hFE Min :
- 5
- Max Power Dissipation :
- 58W
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 10A
- Collector Emitter Breakdown Voltage :
- 700V
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Datasheets
- MD2009DFX

NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole
MD2009DFX Overview
This device has a DC current gain of 5 @ 5.5A 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 10A is necessary for high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.The maximum collector current is 10A volts.
MD2009DFX Features
the DC current gain for this device is 5 @ 5.5A 5V
the vce saturation(Max) is 2.8V @ 1.4A, 5.5A
the emitter base voltage is kept at 7V
MD2009DFX Applications
There are a lot of STMicroelectronics
MD2009DFX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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