MD2001FX
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- Mfr.Part #
- MD2001FX
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOWATT218FX
- Datasheet
- Download
- Description
- TRANS NPN 700V 12A ISOWATT-218FX
- Stock
- 180
- In Stock ：
- 180
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 4.5 @ 6A 5V
- Packaging :
- Tube
- Max Collector Current :
- 12A
- Gain Bandwidth Product :
- 64 kHz
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 9V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 1.8V
- Case Connection :
- Isolated
- Base Part Number :
- MD2001
- Mounting Type :
- Through Hole
- Power Dissipation :
- 58W
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Package / Case :
- ISOWATT218FX
- Max Power Dissipation :
- 58W
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 700V
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1.5A, 6A
- Factory Lead Time :
- 8 Weeks
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 700V
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 200μA
- hFE Min :
- 4.5
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Emitter Base Voltage (VEBO) :
- 9V
- Polarity/Channel Type :
- NPN
- Datasheets
- MD2001FX
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole
MD2001FX Overview
In this device, the DC current gain is 4.5 @ 6A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1.5A, 6A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.
MD2001FX Features
the DC current gain for this device is 4.5 @ 6A 5V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1.5A, 6A
the emitter base voltage is kept at 9V
MD2001FX Applications
There are a lot of STMicroelectronics
MD2001FX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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