MD2001FX
- Mfr.Part #
- MD2001FX
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOWATT218FX
- Datasheet
- Download
- Description
- TRANS NPN 700V 12A ISOWATT-218FX
- Stock
- 180
- In Stock :
- 180
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- hFE Min :
- 4.5
- Collector Emitter Voltage (VCEO) :
- 700V
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 64 kHz
- Base Part Number :
- MD2001
- Current - Collector Cutoff (Max) :
- 200μA
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1.5A, 6A
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 4.5 @ 6A 5V
- Collector Emitter Breakdown Voltage :
- 700V
- Factory Lead Time :
- 8 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.8V
- Emitter Base Voltage (VEBO) :
- 9V
- Element Configuration :
- Single
- Case Connection :
- Isolated
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 58W
- Max Power Dissipation :
- 58W
- Polarity/Channel Type :
- NPN
- Package / Case :
- ISOWATT218FX
- Collector Base Voltage (VCBO) :
- 9V
- Transistor Type :
- NPN
- Max Collector Current :
- 12A
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- Datasheets
- MD2001FX
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole
MD2001FX Overview
In this device, the DC current gain is 4.5 @ 6A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1.5A, 6A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.
MD2001FX Features
the DC current gain for this device is 4.5 @ 6A 5V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1.5A, 6A
the emitter base voltage is kept at 9V
MD2001FX Applications
There are a lot of STMicroelectronics
MD2001FX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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