MD2001FX

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Mfr.Part #
MD2001FX
Manufacturer
STMicroelectronics
Package / Case
ISOWATT218FX
Datasheet
Download
Description
TRANS NPN 700V 12A ISOWATT-218FX
Stock
180
In Stock :
180

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
hFE Min :
4.5
Collector Emitter Voltage (VCEO) :
700V
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Gain Bandwidth Product :
64 kHz
Base Part Number :
MD2001
Current - Collector Cutoff (Max) :
200μA
ECCN Code :
EAR99
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
1.8V @ 1.5A, 6A
Pin Count :
3
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Transistor Application :
AMPLIFIER
Number of Pins :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
4.5 @ 6A 5V
Collector Emitter Breakdown Voltage :
700V
Factory Lead Time :
8 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Mounting Type :
Through Hole
Mount :
Through Hole
Collector Emitter Saturation Voltage :
1.8V
Emitter Base Voltage (VEBO) :
9V
Element Configuration :
Single
Case Connection :
Isolated
Lead Free :
Lead Free
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
58W
Max Power Dissipation :
58W
Polarity/Channel Type :
NPN
Package / Case :
ISOWATT218FX
Collector Base Voltage (VCBO) :
9V
Transistor Type :
NPN
Max Collector Current :
12A
Contact Plating :
Tin
Operating Temperature :
150°C TJ
Datasheets
MD2001FX
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics MD2001FX from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:MD2001, Number of Pins:3, Mounting Type:Through Hole, Package / Case:ISOWATT218FX, Operating Temperature:150°C TJ, MD2001FX pinout, MD2001FX datasheet PDF, MD2001FX amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics MD2001FX ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics MD2001FX


NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole

MD2001FX Overview


In this device, the DC current gain is 4.5 @ 6A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1.5A, 6A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.

MD2001FX Features


the DC current gain for this device is 4.5 @ 6A 5V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1.5A, 6A
the emitter base voltage is kept at 9V


MD2001FX Applications


There are a lot of STMicroelectronics
MD2001FX applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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