MD2009DFP
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- Mfr.Part #
- MD2009DFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 700V 10A TO220FP
- Stock
- 860
- In Stock ：
- 860
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 200μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 1.4A, 5.5A
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Case Connection :
- Isolated
- Package / Case :
- TO-220-3 Full Pack
- Max Power Dissipation :
- 40W
- Max Collector Current :
- 10A
- Power Dissipation :
- 40W
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 700V
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Emitter Base Voltage (VEBO) :
- 7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 5.5A 5V
- Additional Feature :
- UL RECOGNIZED
- Terminal Position :
- Single
- hFE Min :
- 5
- Collector Emitter Voltage (VCEO) :
- 700V
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Base Part Number :
- MD2009
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MD2009DFP
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
MD2009DFP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 5.5A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.8V @ 1.4A, 5.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Collector current can be as low as 10A volts at its maximum.
MD2009DFP Features
the DC current gain for this device is 5 @ 5.5A 5V
the vce saturation(Max) is 2.8V @ 1.4A, 5.5A
the emitter base voltage is kept at 7V
MD2009DFP Applications
There are a lot of STMicroelectronics
MD2009DFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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