MBR3580

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Single

Number of Elements :

1

Terminal Position :

UPPER

Operating Temperature - Junction :

-55°C~150°C

Case Connection :

CATHODE

Max Repetitive Reverse Voltage (Vrrm) :

80V

Mounting Type :

Chassis, Stud Mount

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Factory Lead Time :

10 Weeks

Configuration :

Single

Min Operating Temperature :

-55°C

Packaging :

Bulk

Number of Phases :

1

Mount :

Chassis, Stud

Application :

Power

Package / Case :

DO-203AA, DO-4, Stud

Natural Thermal Resistance :

1.5 °C/W

Max Reverse Voltage (DC) :

80V

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Diode Type :

Schottky

Max Reverse Leakage Current :

1μA

Max Operating Temperature :

150°C

Peak Reverse Current :

1A

Max Surge Current :

600A

Diode Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

O-MUPM-D1

Voltage - Forward (Vf) (Max) @ If :

840mV @ 35A

ECCN Code :

EAR99

Current - Reverse Leakage @ Vr :

1.5mA @ 20V

Pbfree Code :

yes

Average Rectified Current :

35A

HTS Code :

8541.10.00.80

Number of Terminations :

1

Published :

2013

RoHS Status :

RoHS Compliant

Forward Current :

35A

Terminal Form :

Solder Lug