MBR30030CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Current - Reverse Leakage @ Vr :

8mA @ 20V

Min Operating Temperature :

-40°C

Max Repetitive Reverse Voltage (Vrrm) :

30V

Number of Elements :

2

Max Operating Temperature :

175°C

Number of Terminations :

2

HTS Code :

8541.10.00.80

Published :

2012

ECCN Code :

EAR99

Mounting Type :

Chassis Mount

Voltage - Forward (Vf) (Max) @ If :

650mV @ 150A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Diode Element Material :

SILICON

Max Surge Current :

2.5kA

Factory Lead Time :

4 Weeks

Application :

Power

Packaging :

Bulk

Diode Type :

Schottky

Current - Average Rectified (Io) :

300A DC

Max Reverse Voltage (DC) :

30V

Terminal Form :

UNSPECIFIED

Average Rectified Current :

300A

Mount :

Chassis Mount

Number of Phases :

1

JESD-30 Code :

R-PUFM-X2

Forward Current :

300A

Output Current-Max :

150A

Terminal Position :

UPPER

Package / Case :

Twin Tower

RoHS Status :

RoHS Compliant

Peak Reverse Current :

1A

Diode Configuration :

1 Pair Common Anode

Max Reverse Leakage Current :

1μA