MBR30035CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Current - Reverse Leakage @ Vr :

8mA @ 20V

Package / Case :

Twin Tower

RoHS Status :

RoHS Compliant

Terminal Form :

UNSPECIFIED

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Pbfree Code :

yes

Number of Terminations :

2

Diode Configuration :

1 Pair Common Cathode

Forward Voltage :

750mV

Element Configuration :

Common Cathode

Mount :

Chassis Mount

Diode Element Material :

SILICON

Diode Type :

Schottky

Mounting Type :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature - Junction :

-55°C~150°C

Peak Reverse Current :

1μA

Max Operating Temperature :

175°C

Application :

Power

Max Forward Surge Current (Ifsm) :

2.5kA

Packaging :

Bulk

Factory Lead Time :

6 Weeks

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Current - Average Rectified (Io) :

200A DC

Number of Phases :

1

Average Rectified Current :

200A

Terminal Position :

UPPER

Number of Elements :

2

Max Reverse Voltage (DC) :

35V

HTS Code :

8541.10.00.80

Published :

2012

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Repetitive Reverse Voltage (Vrrm) :

35V

Forward Current :

150A

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Voltage - Forward (Vf) (Max) @ If :

650mV @ 150A

Min Operating Temperature :

-40°C

Number of Pins :

2