MBR30035CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

HTS Code :

8541.10.00.80

Element Configuration :

Common Cathode

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Mounting Type :

Chassis Mount

Forward Voltage :

750mV

REACH SVHC :

No SVHC

Max Repetitive Reverse Voltage (Vrrm) :

35V

Max Reverse Voltage (DC) :

35V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Average Rectified Current :

200A

Max Forward Surge Current (Ifsm) :

2.5kA

Max Operating Temperature :

175°C

RoHS Status :

RoHS Compliant

Current - Reverse Leakage @ Vr :

8mA @ 20V

Forward Current :

150A

Diode Type :

Schottky

Published :

2012

ECCN Code :

EAR99

Operating Temperature - Junction :

-55°C~150°C

Package / Case :

Twin Tower

Number of Terminations :

2

Diode Element Material :

SILICON

Min Operating Temperature :

-40°C

Current - Average Rectified (Io) :

200A DC

Diode Configuration :

1 Pair Common Cathode

Packaging :

Bulk

Pbfree Code :

yes

Mount :

Chassis Mount

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Number of Phases :

1

Peak Reverse Current :

1μA

Number of Pins :

2

Voltage - Forward (Vf) (Max) @ If :

650mV @ 150A

Application :

Power

Factory Lead Time :

6 Weeks

Terminal Form :

UNSPECIFIED