MBR30035CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Voltage - Forward (Vf) (Max) @ If :

650mV @ 150A

Element Configuration :

Common Cathode

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Max Forward Surge Current (Ifsm) :

2.5kA

Max Repetitive Reverse Voltage (Vrrm) :

35V

Number of Elements :

2

Diode Configuration :

1 Pair Common Cathode

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

Packaging :

Bulk

Terminal Position :

UPPER

Current - Average Rectified (Io) :

200A DC

Published :

2012

Average Rectified Current :

200A

Max Operating Temperature :

175°C

Operating Temperature - Junction :

-55°C~150°C

Number of Phases :

1

Terminal Form :

UNSPECIFIED

Forward Current :

150A

Pbfree Code :

yes

HTS Code :

8541.10.00.80

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Peak Reverse Current :

1μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Forward Voltage :

750mV

Number of Terminations :

2

Mounting Type :

Chassis Mount

Diode Element Material :

SILICON

ECCN Code :

EAR99

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Application :

Power

Number of Pins :

2

Current - Reverse Leakage @ Vr :

8mA @ 20V

Diode Type :

Schottky

Min Operating Temperature :

-40°C

Max Reverse Voltage (DC) :

35V

Mount :

Chassis Mount

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Package / Case :

Twin Tower