MBR35100

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Single

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Chassis, Stud Mount

Lifecycle Status :

Production (Last Updated: 5 months ago)

Peak Reverse Current :

1A

REACH SVHC :

No SVHC

Voltage - Forward (Vf) (Max) @ If :

840mV @ 35A

Published :

2013

Application :

Power

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Package / Case :

DO-203AA, DO-4, Stud

HTS Code :

8541.10.00.80

Operating Temperature - Junction :

-55°C~150°C

Current - Reverse Leakage @ Vr :

1.5mA @ 20V

Forward Voltage :

840mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Natural Thermal Resistance :

1.5 °C/W

Packaging :

Bulk

Max Operating Temperature :

150°C

Case Connection :

CATHODE

RoHS Status :

RoHS Compliant

Max Repetitive Reverse Voltage (Vrrm) :

100V

Average Rectified Current :

35A

JESD-30 Code :

O-MUPM-D1

Factory Lead Time :

10 Weeks

Diode Type :

Schottky

Diode Element Material :

SILICON

Pbfree Code :

yes

Number of Terminations :

1

Terminal Position :

UPPER

Terminal Form :

Solder Lug

Max Reverse Voltage (DC) :

100V

Number of Elements :

1

Max Reverse Leakage Current :

1μA

Min Operating Temperature :

-55°C

Forward Current :

35A

Max Surge Current :

600A

ECCN Code :

EAR99

Mount :

Chassis, Stud

Number of Phases :

1