MBR30L60CT

Manufacturer :

Taiwan Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Additional Feature :

LOW POWER LOSS

Mounting Type :

Through Hole

Max Reverse Voltage (DC) :

60V

Radiation Hardening :

No

Number of Phases :

1

Application :

EFFICIENCY

Package / Case :

TO-220-3

Current - Reverse Leakage @ Vr :

350μA @ 60V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

ECCN Code :

EAR99

Max Forward Surge Current (Ifsm) :

240A

Forward Current :

30A

Operating Temperature - Junction :

-55°C~150°C

Element Configuration :

Common Cathode

Surface Mount :

No

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

JEDEC-95 Code :

TO-220AB

Peak Non-Repetitive Surge Current :

240A

Pin Count :

3

HTS Code :

8541.10.00.80

Diode Configuration :

1 Pair Common Cathode

Factory Lead Time :

6 Weeks

Max Surge Current :

240A

Number of Terminations :

3

Number of Pins :

3

Forward Voltage :

810mV

Pbfree Code :

yes

Max Repetitive Reverse Voltage (Vrrm) :

60V

Published :

2008

Diode Element Material :

SILICON

Max Operating Temperature :

150°C

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Number of Elements :

2

Series :

SWITCHMODE™

Voltage - Forward (Vf) (Max) @ If :

620mV @ 15A

Average Rectified Current :

15A

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Terminal Position :

Single

Min Operating Temperature :

-55°C

Max Reverse Leakage Current :

350μA

Peak Reverse Current :

350μA

Diode Type :

Schottky