MBR30H100CT

Manufacturer :

Taiwan Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Number of Pins :

3

Average Rectified Current :

15A

Max Operating Temperature :

175°C

Published :

2008

Current - Reverse Leakage @ Vr :

4.5μA @ 100V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Series :

SWITCHMODE™

JESD-609 Code :

e3

Weight :

4.535924g

HTS Code :

8541.10.00.80

Operating Temperature - Junction :

175°C Max

Base Part Number :

MBR30H100CT

ECCN Code :

EAR99

Max Surge Current :

250A

Package / Case :

TO-220-3

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Max Repetitive Reverse Voltage (Vrrm) :

100V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Non-Repetitive Surge Current :

250A

Mounting Type :

Through Hole

Packaging :

Tube

Max Forward Surge Current (Ifsm) :

250A

Diode Configuration :

1 Pair Common Cathode

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Pin Count :

3

Element Configuration :

Common Cathode

Number of Elements :

2

Factory Lead Time :

8 Weeks

Max Reverse Leakage Current :

4.5μA

Voltage - Rated DC :

100V

Current Rating :

30A

Min Operating Temperature :

-65°C

Contact Plating :

Tin

Application :

EFFICIENCY

Diode Element Material :

SILICON

Forward Current :

30A

Number of Terminations :

3

Diode Type :

Schottky

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Height :

15.75mm

Number of Phases :

1

Forward Voltage :

930mV

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

Pbfree Code :

yes

REACH SVHC :

No SVHC

Peak Reverse Current :

4.5μA

Additional Feature :

LOW POWER LOSS

Voltage - Forward (Vf) (Max) @ If :

800mV @ 15A

Max Reverse Voltage (DC) :

100V

Width :

4.82mm

Length :

10.28mm

Terminal Position :

Single