MBR30H100CT

Manufacturer :

Taiwan Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature - Junction :

175°C Max

Lead Free :

Lead Free

Diode Element Material :

SILICON

HTS Code :

8541.10.00.80

Contact Plating :

Tin

Max Repetitive Reverse Voltage (Vrrm) :

100V

Diode Configuration :

1 Pair Common Cathode

Current - Reverse Leakage @ Vr :

4.5μA @ 100V

Length :

10.28mm

Voltage - Rated DC :

100V

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Peak Reflow Temperature (Cel) :

260

Additional Feature :

LOW POWER LOSS

Peak Reverse Current :

4.5μA

Forward Voltage :

930mV

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Max Operating Temperature :

175°C

Base Part Number :

MBR30H100CT

Packaging :

Tube

Weight :

4.535924g

REACH SVHC :

No SVHC

Max Surge Current :

250A

Surface Mount :

No

Height :

15.75mm

Max Reverse Voltage (DC) :

100V

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

Pin Count :

3

Number of Phases :

1

Current Rating :

30A

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Diode Type :

Schottky

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Number of Pins :

3

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Application :

EFFICIENCY

Element Configuration :

Common Cathode

Width :

4.82mm

Max Forward Surge Current (Ifsm) :

250A

Max Reverse Leakage Current :

4.5μA

Forward Current :

30A

JESD-609 Code :

e3

Number of Elements :

2

Average Rectified Current :

15A

Series :

SWITCHMODE™

Voltage - Forward (Vf) (Max) @ If :

800mV @ 15A

Radiation Hardening :

No

Peak Non-Repetitive Surge Current :

250A