MBR30060CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Element Configuration :

Common Anode

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

Twin Tower

Max Repetitive Reverse Voltage (Vrrm) :

60V

Max Operating Temperature :

175°C

Max Reverse Leakage Current :

1μA

Terminal Position :

UPPER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Output Current-Max :

150A

HTS Code :

8541.10.00.80

Max Reverse Voltage (DC) :

60V

Max Surge Current :

2.5kA

Number of Phases :

1

Diode Type :

Schottky

RoHS Status :

RoHS Compliant

Number of Terminations :

2

Current - Average Rectified (Io) :

300A DC

Peak Reverse Current :

1A

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Current - Reverse Leakage @ Vr :

8mA @ 20V

Voltage - Forward (Vf) (Max) @ If :

750mV @ 150A

Min Operating Temperature :

-40°C

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Diode Element Material :

SILICON

Terminal Form :

UNSPECIFIED

Forward Current :

300A

Diode Configuration :

1 Pair Common Anode

Mount :

Chassis Mount

JESD-30 Code :

R-PUFM-X2

Number of Elements :

2

Application :

Power

Average Rectified Current :

300A

Mounting Type :

Chassis Mount