MBR20080CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Diode Configuration :

1 Pair Common Anode

Factory Lead Time :

6 Weeks

Terminal Position :

UPPER

Current - Average Rectified (Io) :

200A DC

Diode Type :

Schottky

Peak Reverse Current :

1A

Application :

Power

Max Reverse Leakage Current :

1μA

Max Operating Temperature :

175°C

Max Surge Current :

1.5kA

Number of Terminations :

2

Current - Reverse Leakage @ Vr :

5mA @ 20V

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Forward Current :

200A

Number of Elements :

2

Min Operating Temperature :

-40°C

Diode Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.10.00.80

JESD-30 Code :

R-PUFM-X2

Published :

2013

Packaging :

Bulk

Element Configuration :

Common Anode

Pbfree Code :

yes

Mount :

Chassis Mount

RoHS Status :

RoHS Compliant

Average Rectified Current :

200A

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Output Current-Max :

100A

Voltage - Forward (Vf) (Max) @ If :

840mV @ 100A

Package / Case :

Twin Tower

Number of Phases :

1

Mounting Type :

Chassis Mount

Terminal Form :

UNSPECIFIED

Max Reverse Voltage (DC) :

80V

Max Repetitive Reverse Voltage (Vrrm) :

80V

ECCN Code :

EAR99