MBR20035CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Voltage - Forward (Vf) (Max) @ If :

650mV @ 100A

RoHS Status :

RoHS Compliant

Element Configuration :

Common Anode

Max Repetitive Reverse Voltage (Vrrm) :

35V

Packaging :

Bulk

ECCN Code :

EAR99

Terminal Position :

UPPER

Max Surge Current :

1.5kA

Forward Current :

200A

Pbfree Code :

yes

Package / Case :

Twin Tower

Published :

2010

Current - Reverse Leakage @ Vr :

5mA @ 20V

Max Operating Temperature :

175°C

Max Reverse Leakage Current :

1μA

Diode Configuration :

1 Pair Common Anode

Lifecycle Status :

Production (Last Updated: 5 months ago)

Application :

Power

Diode Type :

Schottky

Terminal Form :

UNSPECIFIED

Number of Phases :

1

Peak Reverse Current :

1A

HTS Code :

8541.10.00.80

Max Reverse Voltage (DC) :

35V

Output Current-Max :

100A

Average Rectified Current :

200A

Number of Elements :

2

Min Operating Temperature :

-40°C

Current - Average Rectified (Io) :

200A DC

Mount :

Chassis Mount

Diode Element Material :

SILICON

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PUFM-X2

Factory Lead Time :

6 Weeks

Number of Terminations :

2

Mounting Type :

Chassis Mount