MBR20040CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Number of Elements :

2

Mounting Type :

Chassis Mount

Factory Lead Time :

6 Weeks

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Current - Average Rectified (Io) :

200A DC

Forward Current :

200A

Application :

Power

Diode Element Material :

SILICON

Max Operating Temperature :

175°C

Diode Configuration :

1 Pair Common Cathode

Terminal Position :

UPPER

Output Current-Max :

100A

Number of Phases :

1

RoHS Status :

RoHS Compliant

Max Reverse Voltage (DC) :

40V

Peak Reverse Current :

1A

Diode Type :

Schottky

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Forward (Vf) (Max) @ If :

650mV @ 100A

Packaging :

Bulk

Max Surge Current :

1.5kA

Average Rectified Current :

200A

Terminal Form :

UNSPECIFIED

Element Configuration :

Common Cathode

Number of Terminations :

2

Mount :

Chassis Mount

Current - Reverse Leakage @ Vr :

5mA @ 20V

ECCN Code :

EAR99

JESD-30 Code :

R-PUFM-X2

Pbfree Code :

yes

Min Operating Temperature :

-40°C

Max Reverse Leakage Current :

1μA

Published :

2010

HTS Code :

8541.10.00.80

Max Repetitive Reverse Voltage (Vrrm) :

40V

Package / Case :

Twin Tower