MBR200100CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Package / Case :

Twin Tower

Published :

2013

Termination :

Solder

Number of Terminations :

2

Voltage - Forward (Vf) (Max) @ If :

840mV @ 100A

HTS Code :

8541.10.00.80

Pbfree Code :

yes

Max Voltage Rating (DC) :

600.6kV

RoHS Status :

RoHS Compliant

Max Reverse Leakage Current :

1μA

Number of Phases :

1

Forward Current :

200A

Current - Reverse Leakage @ Vr :

5mA @ 20V

Number of Contacts :

6

Diode Configuration :

1 Pair Common Anode

Pitch :

4.2mm

Max Operating Temperature :

175°C

Diode Type :

Schottky

Current - Average Rectified (Io) :

200A DC

Packaging :

Bulk

Output Current-Max :

100A

Terminal Form :

UNSPECIFIED

Average Rectified Current :

200A

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Mounting Type :

Chassis Mount

Application :

Power

Max Repetitive Reverse Voltage (Vrrm) :

100V

ECCN Code :

EAR99

Mount :

Chassis Mount, Through Hole

Peak Reverse Current :

1A

Max Surge Current :

1.5kA

Terminal Position :

UPPER

Min Operating Temperature :

-40°C

Number of Elements :

2

Factory Lead Time :

6 Weeks

Max Reverse Voltage (DC) :

100V

Diode Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PUFM-X2

Orientation :

Straight

Element Configuration :

Common Anode

Speed :

Fast Recovery =< 500ns, > 200mA (Io)