MBR20030CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Terminal Position :

UPPER

Peak Reverse Current :

1A

Max Operating Temperature :

175°C

Output Current-Max :

100A

Number of Terminations :

2

Max Reverse Voltage (DC) :

30V

Diode Configuration :

1 Pair Common Cathode

Max Reverse Leakage Current :

1μA

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Min Operating Temperature :

-40°C

Current - Average Rectified (Io) :

200A DC

Max Surge Current :

1.5kA

Forward Current :

200A

Number of Phases :

1

Number of Elements :

2

Packaging :

Bulk

ECCN Code :

EAR99

Current - Reverse Leakage @ Vr :

5mA @ 20V

HTS Code :

8541.10.00.80

Voltage - Forward (Vf) (Max) @ If :

650mV @ 100A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

Twin Tower

Operating Temperature - Junction :

-55°C~150°C

Average Rectified Current :

200A

Diode Element Material :

SILICON

Mounting Type :

Chassis Mount

RoHS Status :

RoHS Compliant

Application :

Power

JESD-30 Code :

R-PUFM-X2

Published :

2010

Factory Lead Time :

6 Weeks

Max Repetitive Reverse Voltage (Vrrm) :

30V

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Pbfree Code :

yes

Terminal Form :

UNSPECIFIED

Diode Type :

Schottky

Mount :

Chassis Mount