MBR20060CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Reverse Voltage (DC) :

60V

Published :

2012

Terminal Form :

UNSPECIFIED

Diode Configuration :

1 Pair Common Cathode

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Common Cathode

Application :

Power

Voltage - Forward (Vf) (Max) @ If :

750mV @ 100A

Min Operating Temperature :

-40°C

Package / Case :

Twin Tower

Max Surge Current :

1.5kA

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Max Operating Temperature :

175°C

Current - Reverse Leakage @ Vr :

5mA @ 20V

Number of Terminations :

2

HTS Code :

8541.10.00.80

Peak Reverse Current :

1A

Packaging :

Bulk

Diode Type :

Schottky

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Mount :

Chassis Mount

Number of Phases :

1

Pbfree Code :

yes

Current - Average Rectified (Io) :

200A DC

Max Reverse Leakage Current :

1μA

Number of Elements :

2

Mounting Type :

Chassis Mount

Max Repetitive Reverse Voltage (Vrrm) :

60V

Average Rectified Current :

200A

Factory Lead Time :

6 Weeks

Terminal Position :

UPPER

Forward Current :

200A

Lifecycle Status :

Production (Last Updated: 5 months ago)

Output Current-Max :

100A

JESD-30 Code :

R-PUFM-X2

Diode Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant