LND150N8-G

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Mfr.Part #
LND150N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 500V 30MA SOT89-3
Stock
34,895
In Stock :
34,895

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-243AA
Fall Time (Typ) :
450 ns
RoHS Status :
ROHS3 Compliant
Qualification :
-
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
5 Weeks
JEDEC-95 Code :
TO-243AA
Rds On (Max) @ Id, Vgs :
1000 Ω @ 500μA, 0V
Product Status :
Active
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Feedback Cap-Max (Crss) :
1 pF
Product Type :
MOSFET
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
30mA
Product Category :
MOSFET
MSL :
MSL 1 - Unlimited
Lead Free :
Lead Free
Turn On Delay Time :
90 ns
Brand :
Microchip Technology / Atmel
Reach Compliance Code :
Compliant
Height :
1.6mm
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
30mA Tj
Supplier Device Package :
SOT-89-3
Number of Terminals :
3
Terminal Position :
Single
Product :
MOSFET Small Signal
Channel Type :
N
Terminal Finish :
MATTE TIN
Transistor Element Material :
SILICON
Number of Channels :
1
Mounting Style :
SMD/SMT
Package Type :
TO-243AA
Pbfree Code :
yes
Operating Mode :
Depletion Mode
Vgs(th) (Max) @ Id :
--
Maximum Operating Temperature :
+150 °C
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On,Min Rds On) :
0V
Base Product Number :
LND150
Pin Count :
4
Width :
2.6mm
Rise Time :
450ns
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
DS Breakdown Voltage-Min :
500 V
Gate to Source Voltage (Vgs) :
20V
Transistor Type :
1 N-Channel
Drain to Source Voltage (Vdss) :
500V
Manufacturer :
Microchip
Contact Plating :
Tin
Channel Mode :
Depletion
Number of Elements per Chip :
1
FET Feature :
Depletion Mode
Number of Pins :
4
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Operating Temperature :
-55°C~150°C TJ
Additional Feature :
HIGH INPUT IMPEDANCE
Weight :
52.786812mg
Transistor Polarity :
N-Channel
Subcategory :
MOSFETs
Turn-Off Delay Time :
100 ns
Case Connection :
SOURCE
ECCN Code :
EAR99
Number of Elements :
1
Power Dissipation-Max :
1.6W Ta
REACH SVHC :
No SVHC
Continuous Drain Current Id :
30
Drain to Source Breakdown Voltage :
500V
FET Type :
N-Channel
RoHS :
Details
Mount :
Surface Mount
Published :
2005
Minimum Operating Temperature :
-55 °C
Configuration :
Single
Terminal Form :
Flat
Drain Current-Max (Abs) (ID) :
0.03A
Drain-source On Resistance-Max :
1000 Ω
Radiation Hardening :
No
Power Dissipation (Max) :
1.6W (Ta)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
10pF @ 25V
Series :
--
Vgs (Max) :
±20V
Power Dissipation :
1.2W
Number of Terminations :
3
Length :
4.6mm
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
40
Type :
FET
JESD-30 Code :
R-PSSO-F3
Surface Mount :
yes
Datasheets
LND150N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology LND150N8-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Number of Channels:1, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Surface Mount, Type:FET, LND150N8-G pinout, LND150N8-G datasheet PDF, LND150N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology LND150N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology LND150N8-G


N-Channel Tape & Reel (TR) 1000 Ω @ 500μA, 0V ±20V 10pF @ 25V 500V TO-243AA

LND150N8-G Description


The LND150 is a lateral DMOS transistor from Supertex that operates in the N-channel depletion mode (usually on). The gate is protected from ESD. The LND150 is perfect for high voltage applications such as voltage ramp generation, amplification, precision constant current sources, normally-on switches, and constant current sources.



LND150N8-G Features


  • without secondary deterioration

  • Low power drive necessary

  • Easy parallelization

  • Outstanding thermal stability

  • Diode with integral source-drain

  • Low CISS and high input impedance

  • ESD gate security



LND150N8-G Applications


  • SSRs, solid-state relays

  • Switches that are always on

  • The converters

  • Circuits for power supplies

  • Sources of constant current

  • Circuits for input protection


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