LND150N3-G-P002

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

Number of Channels :

1

Power Dissipation-Max :

740mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

0V

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-92

Number of Elements :

1

Product :

MOSFET Small Signal

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

30mA Tj

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Package Shape :

Round

Product Status :

Active

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1000 Ω @ 500μA, 0V

Drain Current-Max (Abs) (ID) :

0.03A

Fall Time (Typ) :

1.3 μs

Height :

5.33mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

1 N-Channel

Weight :

453.59237mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Category :

MOSFET

Configuration :

Single

Vgs(th) (Max) @ Id :

--

Subcategory :

MOSFETs

Manufacturer :

Microchip

Terminal Form :

THROUGH-HOLE

Feedback Cap-Max (Crss) :

1 pF

Number of Terminations :

3

Mounting Style :

Through Hole

Turn On Delay Time :

90 ns

JESD-30 Code :

O-PBCY-T3

Transistor Application :

SWITCHING

Supplier Device Package :

TO-92-3

Published :

2014

Power Dissipation (Max) :

740mW (Ta)

Transistor Element Material :

SILICON

RoHS :

Details

Drain to Source Voltage (Vdss) :

500V

Vgs (Max) :

±20V

Surface Mount :

No

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Length :

5.21mm

Series :

--

Product Type :

MOSFET

Continuous Drain Current (ID) :

30mA

Drain-source On Resistance-Max :

1000 Ω

Transistor Polarity :

N-Channel

Operating Mode :

Depletion Mode

Drain to Source Breakdown Voltage :

500V

Channel Mode :

Depletion

Turn-Off Delay Time :

100 ns

Base Product Number :

LND150

Maximum Operating Temperature :

+ 150 C

Package :

Tape and Reel (TR)

Terminal Position :

BOTTOM

Mount :

Through Hole

Number of Terminals :

3

Input Capacitance (Ciss) (Max) @ Vds :

10pF @ 25V

Rise Time :

450ns

Minimum Operating Temperature :

- 55 C

DS Breakdown Voltage-Min :

500 V

Brand :

Microchip Technology / Atmel

Factory Lead Time :

8 Weeks

FET Feature :

Depletion Mode

RoHS Status :

ROHS3 Compliant

Width :

4.19mm

FET Type :

N-Channel