LND150K1-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Product Type :

MOSFET

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

SOT-23-3

Number of Terminations :

3

Mounting Type :

Surface Mount

MSL :

MSL 1 - Unlimited

Number of Terminals :

3

Manufacturer :

Microchip

Product :

MOSFET Small Signal

Product Category :

MOSFET

Maximum Operating Temperature :

+ 150 C

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Continuous Drain Current (ID) :

13mA

Channel Type :

N

Fall Time (Typ) :

1.3 μs

Input Capacitance (Ciss) (Max) @ Vds :

10pF @ 25V

JEDEC-95 Code :

TO-236AB

Weight :

1.437803g

Transistor Application :

SWITCHING

Turn-Off Delay Time :

100 ns

Factory Lead Time :

5 Weeks

Power Dissipation (Max) :

360mW (Ta)

Drain to Source Breakdown Voltage :

500V

Reach Compliance Code :

Compliant

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

0V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

13mA Tj

REACH SVHC :

No SVHC

Continuous Drain Current Id :

13

HTS Code :

8541.21.00.95

Turn On Delay Time :

90 ns

Terminal Position :

Dual

Product Status :

Active

Mounting Style :

SMD/SMT

DS Breakdown Voltage-Min :

500 V

Brand :

Microchip Technology / Atmel

Vgs (Max) :

±20V

JESD-609 Code :

e3

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

ECCN Code :

EAR99

Subcategory :

MOSFETs

Feedback Cap-Max (Crss) :

1 pF

Height :

1.02mm

RoHS :

Details

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Transistor Polarity :

N-Channel

Base Product Number :

LND150

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

--

Power Dissipation :

360mW

Qualification :

-

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - annealed

Channel Mode :

Depletion

Minimum Operating Temperature :

- 55 C

Series :

--

Rise Time :

450ns

FET Feature :

Depletion Mode

Gate to Source Voltage (Vgs) :

20V

Length :

3.04mm

JESD-30 Code :

R-PDSO-G3

Rds On (Max) @ Id, Vgs :

1000 Ω @ 500μA, 0V

Operating Mode :

Depletion Mode

Number of Channels :

1 Channel

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

360mW Ta

Configuration :

Single

Radiation Hardening :

No

Width :

1.4mm

Terminal Form :

Gull wing

Number of Pins :

3

Package Shape :

RECTANGULAR

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

40

Drain-source On Resistance-Max :

1000 Ω

Transistor Type :

1 N-Channel

Polarity/Channel Type :

N-Channel

Published :

2014

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

Number of Elements :

1