LND150N3-G-P013

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Mfr.Part #
LND150N3-G-P013
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 500V 30MA TO92-3
Stock
44,340
In Stock :
44,340

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Channel Type :
N
Package :
Tape and Box (TB)
Feedback Cap-Max (Crss) :
1 pF
Mounting Type :
Through Hole
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Number of Terminations :
3
Rise Time :
450ns
RoHS :
Details
Pbfree Code :
yes
Brand :
Microchip Technology / Atmel
Mounting Style :
Through Hole
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Through Hole
Element Configuration :
Single
Fall Time (Typ) :
1.3 μs
Reach Compliance Code :
Compliant
Base Product Number :
LND150
Power Dissipation-Max :
740mW Ta
DS Breakdown Voltage-Min :
500V
Width :
4.19mm
Supplier Device Package :
TO-92-3
Length :
5.21mm
Package Shape :
Round
Vgs(th) (Max) @ Id :
--
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
0V
Drain Current-Max (Abs) (ID) :
0.03A
Minimum Operating Temperature :
- 55 C
Number of Channels :
1
Surface Mount :
No
Product :
MOSFET Small Signal
Polarity/Channel Type :
N-Channel
Turn On Delay Time :
90 ns
Transistor Element Material :
SILICON
Maximum Operating Temperature :
+ 150 C
FET Feature :
Depletion Mode
Turn-Off Delay Time :
100 ns
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Rds On (Max) @ Id, Vgs :
1000 Ω @ 500μA, 0V
Subcategory :
MOSFETs
Height :
5.33mm
Weight :
453.59237mg
JEDEC-95 Code :
TO-92
Terminal Position :
BOTTOM
Gate to Source Voltage (Vgs) :
20V
Manufacturer :
Microchip
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Transistor Application :
SWITCHING
Continuous Drain Current Id :
0.03
Factory Lead Time :
8 Weeks
Channel Mode :
Depletion
Transistor Type :
1 N-Channel
Product Category :
MOSFET
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
740mW (Ta)
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
500V
Series :
--
Current - Continuous Drain (Id) @ 25°C :
30mA Tj
Packaging :
Tape and Box (TB)
Terminal Form :
THROUGH-HOLE
Continuous Drain Current (ID) :
30mA
JESD-30 Code :
O-PBCY-T3
Published :
2014
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
1000 Ω
Product Status :
Active
Operating Mode :
Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds :
10pF @ 25V
Datasheets
LND150N3-G-P013
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology LND150N3-G-P013 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Terminations:3, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, LND150N3-G-P013 pinout, LND150N3-G-P013 datasheet PDF, LND150N3-G-P013 amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology LND150N3-G-P013 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology LND150N3-G-P013


N-Channel Tape & Box (TB) 1000 Ω @ 500μA, 0V ±20V 10pF @ 25V 500V TO-226-3, TO-92-3 (TO-226AA)

LND150N3-G-P013 Overview


A device's maximum input capacitance is 10pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 0.03A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 90 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.

LND150N3-G-P013 Features


a continuous drain current (ID) of 30mA
the turn-off delay time is 100 ns
a 500V drain to source voltage (Vdss)


LND150N3-G-P013 Applications


There are a lot of Microchip Technology
LND150N3-G-P013 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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