LND150N3-G-P013
- Mfr.Part #
- LND150N3-G-P013
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30MA TO92-3
- Stock
- 44,340
- In Stock :
- 44,340
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Channel Type :
- N
- Package :
- Tape and Box (TB)
- Feedback Cap-Max (Crss) :
- 1 pF
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Terminations :
- 3
- Rise Time :
- 450ns
- RoHS :
- Details
- Pbfree Code :
- yes
- Brand :
- Microchip Technology / Atmel
- Mounting Style :
- Through Hole
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Through Hole
- Element Configuration :
- Single
- Fall Time (Typ) :
- 1.3 μs
- Reach Compliance Code :
- Compliant
- Base Product Number :
- LND150
- Power Dissipation-Max :
- 740mW Ta
- DS Breakdown Voltage-Min :
- 500V
- Width :
- 4.19mm
- Supplier Device Package :
- TO-92-3
- Length :
- 5.21mm
- Package Shape :
- Round
- Vgs(th) (Max) @ Id :
- --
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Drain Current-Max (Abs) (ID) :
- 0.03A
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1
- Surface Mount :
- No
- Product :
- MOSFET Small Signal
- Polarity/Channel Type :
- N-Channel
- Turn On Delay Time :
- 90 ns
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- FET Feature :
- Depletion Mode
- Turn-Off Delay Time :
- 100 ns
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 1000 Ω @ 500μA, 0V
- Subcategory :
- MOSFETs
- Height :
- 5.33mm
- Weight :
- 453.59237mg
- JEDEC-95 Code :
- TO-92
- Terminal Position :
- BOTTOM
- Gate to Source Voltage (Vgs) :
- 20V
- Manufacturer :
- Microchip
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Continuous Drain Current Id :
- 0.03
- Factory Lead Time :
- 8 Weeks
- Channel Mode :
- Depletion
- Transistor Type :
- 1 N-Channel
- Product Category :
- MOSFET
- Transistor Polarity :
- N-Channel
- Power Dissipation (Max) :
- 740mW (Ta)
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 500V
- Series :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 30mA Tj
- Packaging :
- Tape and Box (TB)
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current (ID) :
- 30mA
- JESD-30 Code :
- O-PBCY-T3
- Published :
- 2014
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 1000 Ω
- Product Status :
- Active
- Operating Mode :
- Depletion Mode
- Input Capacitance (Ciss) (Max) @ Vds :
- 10pF @ 25V
- Datasheets
- LND150N3-G-P013
,TO-226_straightlead.jpg)
N-Channel Tape & Box (TB) 1000 Ω @ 500μA, 0V ±20V 10pF @ 25V 500V TO-226-3, TO-92-3 (TO-226AA)
LND150N3-G-P013 Overview
A device's maximum input capacitance is 10pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 0.03A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 90 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.
LND150N3-G-P013 Features
a continuous drain current (ID) of 30mA
the turn-off delay time is 100 ns
a 500V drain to source voltage (Vdss)
LND150N3-G-P013 Applications
There are a lot of Microchip Technology
LND150N3-G-P013 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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