LND150N3-G-P013

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2014

Minimum Operating Temperature :

- 55 C

Pbfree Code :

yes

JEDEC-95 Code :

TO-92

Package :

Tape and Box (TB)

Packaging :

Tape and Box (TB)

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

--

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Number of Elements :

1

Continuous Drain Current (ID) :

30mA

Package Shape :

Round

DS Breakdown Voltage-Min :

500V

Rise Time :

450ns

Channel Mode :

Depletion

Terminal Position :

BOTTOM

Mount :

Through Hole

Product Status :

Active

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Number of Channels :

1

Supplier Device Package :

TO-92-3

Rds On (Max) @ Id, Vgs :

1000 Ω @ 500μA, 0V

Transistor Polarity :

N-Channel

Product Category :

MOSFET

FET Type :

N-Channel

FET Feature :

Depletion Mode

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

5.33mm

Manufacturer :

Microchip

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

30mA Tj

Feedback Cap-Max (Crss) :

1 pF

Weight :

453.59237mg

Vgs (Max) :

±20V

Channel Type :

N

Base Product Number :

LND150

Transistor Element Material :

SILICON

Width :

4.19mm

JESD-30 Code :

O-PBCY-T3

Subcategory :

MOSFETs

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

0.03A

Reach Compliance Code :

Compliant

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

0V

Number of Terminals :

3

Operating Mode :

Depletion Mode

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

Product Type :

MOSFET

RoHS :

Details

Surface Mount :

No

Series :

--

Operating Temperature :

-55°C~150°C TJ

Brand :

Microchip Technology / Atmel

Power Dissipation (Max) :

740mW (Ta)

Element Configuration :

Single

Mounting Style :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

10pF @ 25V

Turn On Delay Time :

90 ns

Continuous Drain Current Id :

0.03

Length :

5.21mm

Fall Time (Typ) :

1.3 μs

Power Dissipation-Max :

740mW Ta

Transistor Type :

1 N-Channel

Maximum Operating Temperature :

+ 150 C

Configuration :

Single

Product :

MOSFET Small Signal

Drain-source On Resistance-Max :

1000 Ω

Drain to Source Voltage (Vdss) :

500V

Turn-Off Delay Time :

100 ns