LND150N3-G-P013

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

453.59237mg

Channel Type :

N

Power Dissipation-Max :

740mW Ta

Series :

--

Pbfree Code :

yes

Product Status :

Active

Width :

4.19mm

Continuous Drain Current Id :

0.03

Current - Continuous Drain (Id) @ 25°C :

30mA Tj

Rise Time :

450ns

Package Shape :

Round

Drain-source On Resistance-Max :

1000 Ω

Element Configuration :

Single

Terminal Form :

THROUGH-HOLE

FET Type :

N-Channel

Polarity/Channel Type :

N-Channel

Base Product Number :

LND150

Number of Channels :

1

Number of Terminals :

3

Number of Terminations :

3

Supplier Device Package :

TO-92-3

Fall Time (Typ) :

1.3 μs

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Package :

Tape and Box (TB)

Drain Current-Max (Abs) (ID) :

0.03A

FET Feature :

Depletion Mode

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Factory Lead Time :

8 Weeks

Surface Mount :

No

Mount :

Through Hole

Reach Compliance Code :

Compliant

Product Type :

MOSFET

DS Breakdown Voltage-Min :

500V

Minimum Operating Temperature :

- 55 C

JEDEC-95 Code :

TO-92

Number of Elements :

1

Configuration :

Single

Length :

5.21mm

Terminal Position :

BOTTOM

JESD-30 Code :

O-PBCY-T3

Packaging :

Tape and Box (TB)

Transistor Type :

1 N-Channel

Subcategory :

MOSFETs

Brand :

Microchip Technology / Atmel

Feedback Cap-Max (Crss) :

1 pF

Published :

2014

Manufacturer :

Microchip

Mounting Type :

Through Hole

Product Category :

MOSFET

Channel Mode :

Depletion

Drive Voltage (Max Rds On,Min Rds On) :

0V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

30mA

Rds On (Max) @ Id, Vgs :

1000 Ω @ 500μA, 0V

Mounting Style :

Through Hole

Vgs(th) (Max) @ Id :

--

RoHS :

Details

Maximum Operating Temperature :

+ 150 C

Height :

5.33mm

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

740mW (Ta)

Turn On Delay Time :

90 ns

Turn-Off Delay Time :

100 ns

Operating Mode :

Depletion Mode

Product :

MOSFET Small Signal

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

10pF @ 25V