LND150N3-G-P013
- Mfr.Part #
- LND150N3-G-P013
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30MA TO92-3
- Stock
- 44,340
- In Stock :
- 44,340
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Base Product Number :
- LND150
- Turn-Off Delay Time :
- 100 ns
- Rise Time :
- 450ns
- Vgs (Max) :
- ±20V
- Brand :
- Microchip Technology / Atmel
- Series :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time :
- 90 ns
- Drain-source On Resistance-Max :
- 1000 Ω
- RoHS :
- Details
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Mounting Style :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 30mA
- Weight :
- 453.59237mg
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 500V
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- No
- FET Type :
- N-Channel
- Terminal Position :
- BOTTOM
- Channel Mode :
- Depletion
- Rds On (Max) @ Id, Vgs :
- 1000 Ω @ 500μA, 0V
- Power Dissipation-Max :
- 740mW Ta
- Manufacturer :
- Microchip
- Transistor Element Material :
- SILICON
- Product :
- MOSFET Small Signal
- Height :
- 5.33mm
- Product Category :
- MOSFET
- FET Feature :
- Depletion Mode
- Channel Type :
- N
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- JEDEC-95 Code :
- TO-92
- Product Status :
- Active
- Supplier Device Package :
- TO-92-3
- Vgs(th) (Max) @ Id :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 10pF @ 25V
- Subcategory :
- MOSFETs
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Compliant
- Continuous Drain Current Id :
- 0.03
- Fall Time (Typ) :
- 1.3 μs
- Number of Terminations :
- 3
- Number of Channels :
- 1
- Packaging :
- Tape and Box (TB)
- Minimum Operating Temperature :
- - 55 C
- Package :
- Tape and Box (TB)
- Published :
- 2014
- Current - Continuous Drain (Id) @ 25°C :
- 30mA Tj
- Mount :
- Through Hole
- Transistor Polarity :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 0.03A
- Drain to Source Voltage (Vdss) :
- 500V
- Pbfree Code :
- yes
- Transistor Type :
- 1 N-Channel
- Number of Terminals :
- 3
- Number of Elements :
- 1
- Operating Mode :
- Depletion Mode
- Length :
- 5.21mm
- Maximum Operating Temperature :
- + 150 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- O-PBCY-T3
- Width :
- 4.19mm
- Feedback Cap-Max (Crss) :
- 1 pF
- Factory Lead Time :
- 8 Weeks
- Package Shape :
- Round
- Power Dissipation (Max) :
- 740mW (Ta)
- Terminal Form :
- THROUGH-HOLE
- Element Configuration :
- Single
- Datasheets
- LND150N3-G-P013
,TO-226_straightlead.jpg)
N-Channel Tape & Box (TB) 1000 Ω @ 500μA, 0V ±20V 10pF @ 25V 500V TO-226-3, TO-92-3 (TO-226AA)
LND150N3-G-P013 Overview
A device's maximum input capacitance is 10pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 0.03A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 90 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.
LND150N3-G-P013 Features
a continuous drain current (ID) of 30mA
the turn-off delay time is 100 ns
a 500V drain to source voltage (Vdss)
LND150N3-G-P013 Applications
There are a lot of Microchip Technology
LND150N3-G-P013 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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