LND150N3-G-P013

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Mfr.Part #
LND150N3-G-P013
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 500V 30MA TO92-3
Stock
44,340
In Stock :
44,340

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
Round
Terminal Position :
BOTTOM
Base Product Number :
LND150
Mounting Type :
Through Hole
Number of Channels :
1
Transistor Type :
1 N-Channel
Series :
--
Drive Voltage (Max Rds On,Min Rds On) :
0V
Product Type :
MOSFET
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
10pF @ 25V
Product :
MOSFET Small Signal
Vgs (Max) :
±20V
Drain Current-Max (Abs) (ID) :
0.03A
Operating Mode :
Depletion Mode
Channel Type :
N
Published :
2014
Supplier Device Package :
TO-92-3
FET Feature :
Depletion Mode
RoHS :
Details
Number of Terminations :
3
Polarity/Channel Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
Microchip
Vgs(th) (Max) @ Id :
--
JEDEC-95 Code :
TO-92
Width :
4.19mm
Continuous Drain Current (ID) :
30mA
Number of Terminals :
3
Height :
5.33mm
Surface Mount :
No
FET Type :
N-Channel
Rise Time :
450ns
Minimum Operating Temperature :
- 55 C
Weight :
453.59237mg
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
THROUGH-HOLE
Product Category :
MOSFET
Turn-Off Delay Time :
100 ns
Transistor Polarity :
N-Channel
Packaging :
Tape and Box (TB)
Mounting Style :
Through Hole
Channel Mode :
Depletion
JESD-30 Code :
O-PBCY-T3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Turn On Delay Time :
90 ns
Fall Time (Typ) :
1.3 μs
RoHS Status :
ROHS3 Compliant
Power Dissipation (Max) :
740mW (Ta)
Configuration :
Single
DS Breakdown Voltage-Min :
500V
Reach Compliance Code :
Compliant
Rds On (Max) @ Id, Vgs :
1000 Ω @ 500μA, 0V
Product Status :
Active
Length :
5.21mm
Transistor Application :
SWITCHING
Subcategory :
MOSFETs
Power Dissipation-Max :
740mW Ta
Feedback Cap-Max (Crss) :
1 pF
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package :
Tape and Box (TB)
Current - Continuous Drain (Id) @ 25°C :
30mA Tj
Transistor Element Material :
SILICON
Number of Elements :
1
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
500V
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current Id :
0.03
Drain-source On Resistance-Max :
1000 Ω
Mount :
Through Hole
Brand :
Microchip Technology / Atmel
Factory Lead Time :
8 Weeks
Datasheets
LND150N3-G-P013
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology LND150N3-G-P013 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), LND150N3-G-P013 pinout, LND150N3-G-P013 datasheet PDF, LND150N3-G-P013 amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology LND150N3-G-P013 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology LND150N3-G-P013


N-Channel Tape & Box (TB) 1000 Ω @ 500μA, 0V ±20V 10pF @ 25V 500V TO-226-3, TO-92-3 (TO-226AA)

LND150N3-G-P013 Overview


A device's maximum input capacitance is 10pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 0.03A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 90 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.

LND150N3-G-P013 Features


a continuous drain current (ID) of 30mA
the turn-off delay time is 100 ns
a 500V drain to source voltage (Vdss)


LND150N3-G-P013 Applications


There are a lot of Microchip Technology
LND150N3-G-P013 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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