KST4401MTF
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- Mfr.Part #
- KST4401MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 35,454
- In Stock ：
- 35,454
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Max Operating Temperature :
- 150°C
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Transistor Type :
- NPN
- Length :
- 2.9mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 250MHz
- Current Rating :
- 600mA
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Voltage - Rated DC :
- 40V
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 250MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 40V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Published :
- 2002
- Terminal Form :
- Gull wing
- hFE Min :
- 100
- Weight :
- 30mg
- Power Dissipation :
- 350mW
- Collector Emitter Saturation Voltage :
- 750mV
- Mounting Type :
- Surface Mount
- Width :
- 1.3mm
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 40V
- Transition Frequency :
- 250MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 350mW
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Number of Terminations :
- 3
- Height :
- 970μm
- Factory Lead Time :
- 6 Weeks
- Max Collector Current :
- 600mA
- RoHS Status :
- ROHS3 Compliant
- Turn Off Time-Max (toff) :
- 255ns
- Transistor Application :
- SWITCHING
- Base Part Number :
- KST4401
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Pins :
- 3
- Datasheets
- KST4401MTF
NPN 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST4401MTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
KST4401MTF Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
KST4401MTF Applications
There are a lot of ON Semiconductor
KST4401MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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