KST4401MTF
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- Mfr.Part #
- KST4401MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 35,454
- In Stock ：
- 35,454
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Saturation Voltage :
- 750mV
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 40V
- Published :
- 2002
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 40V
- Gain Bandwidth Product :
- 250MHz
- Number of Elements :
- 1
- hFE Min :
- 100
- Max Operating Temperature :
- 150°C
- Transition Frequency :
- 250MHz
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 600mA
- Max Power Dissipation :
- 350mW
- Max Collector Current :
- 600mA
- Height :
- 970μm
- Frequency :
- 250MHz
- Turn Off Time-Max (toff) :
- 255ns
- Element Configuration :
- Single
- Length :
- 2.9mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Lead Free :
- Lead Free
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 40V
- Voltage - Rated DC :
- 40V
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 350mW
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 30mg
- ECCN Code :
- EAR99
- Base Part Number :
- KST4401
- Width :
- 1.3mm
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Datasheets
- KST4401MTF
NPN 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST4401MTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
KST4401MTF Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
KST4401MTF Applications
There are a lot of ON Semiconductor
KST4401MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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