KST43MTF
- Mfr.Part #
- KST43MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 200V 0.5A SOT23-3
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 200V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 50MHz
- Transition Frequency :
- 50MHz
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 350mW
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 200V
- Length :
- 2.9mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Collector Base Voltage (VCBO) :
- 200V
- Published :
- 2002
- Factory Lead Time :
- 13 Weeks
- Width :
- 1.3mm
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 350mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 970μm
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 500mA
- Collector Emitter Saturation Voltage :
- 500mV
- Frequency :
- 50MHz
- Terminal Position :
- Dual
- Weight :
- 30mg
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- KST43
- Collector Emitter Voltage (VCEO) :
- 200V
- hFE Min :
- 40
- Datasheets
- KST43MTF

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST43MTF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 30mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 200V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
KST43MTF Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KST43MTF Applications
There are a lot of ON Semiconductor
KST43MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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