KST05MTF
- Mfr.Part #
- KST05MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 56,870
- In Stock :
- 56,870
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 30mg
- Emitter Base Voltage (VEBO) :
- 4V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Factory Lead Time :
- 6 Weeks
- Base Part Number :
- KST05
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 250mV
- Collector Emitter Voltage (VCEO) :
- 60V
- hFE Min :
- 50
- Frequency :
- 100MHz
- Published :
- 2008
- Voltage - Rated DC :
- 60V
- Radiation Hardening :
- No
- Current Rating :
- 500mA
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Max Operating Temperature :
- 150°C
- Max Power Dissipation :
- 350mW
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Power Dissipation :
- 350mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- KST05MTF

NPN 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST05MTF Overview
This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
KST05MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KST05MTF Applications
There are a lot of ON Semiconductor
KST05MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| KST05MTF | Fairchild Semiconductor | 56,870 | TRANS NPN 60V 0.5A SOT23-3 |
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| KST06MTF-FS | Fairchild Semiconductor | 30,422 | TRANS NPN 80V 0.5A SOT23-3 |
















