KST05MTF
- Mfr.Part #
- KST05MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 56,870
- In Stock :
- 56,870
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Collector Current :
- 500mA
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Published :
- 2008
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 60V
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Gain Bandwidth Product :
- 100MHz
- Voltage - Rated DC :
- 60V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 350mW
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 4V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 60V
- Max Operating Temperature :
- 150°C
- Number of Pins :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Collector Emitter Saturation Voltage :
- 250mV
- Packaging :
- Tape and Reel (TR)
- Weight :
- 30mg
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 6 Weeks
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Current Rating :
- 500mA
- hFE Min :
- 50
- Base Part Number :
- KST05
- Collector Emitter Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Power Dissipation :
- 350mW
- Datasheets
- KST05MTF

NPN 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST05MTF Overview
This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
KST05MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KST05MTF Applications
There are a lot of ON Semiconductor
KST05MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| KST05MTF | Fairchild Semiconductor | 56,870 | TRANS NPN 60V 0.5A SOT23-3 |
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| KST06MTF-FS | Fairchild Semiconductor | 30,422 | TRANS NPN 80V 0.5A SOT23-3 |
















