KST05MTF
- Mfr.Part #
- KST05MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 56,870
- In Stock :
- 56,870
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Current Rating :
- 500mA
- Collector Base Voltage (VCBO) :
- 60V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Factory Lead Time :
- 6 Weeks
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Max Operating Temperature :
- 150°C
- Collector Emitter Saturation Voltage :
- 250mV
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 4V
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 60V
- Published :
- 2008
- Max Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 350mW
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Power Dissipation :
- 350mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Collector Emitter Breakdown Voltage :
- 60V
- Frequency :
- 100MHz
- Max Collector Current :
- 500mA
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Weight :
- 30mg
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Mounting Type :
- Surface Mount
- Base Part Number :
- KST05
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- hFE Min :
- 50
- Datasheets
- KST05MTF

NPN 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST05MTF Overview
This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
KST05MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KST05MTF Applications
There are a lot of ON Semiconductor
KST05MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| KST05MTF | onsemi | 56,870 | TRANS NPN 60V 0.5A SOT23-3 |
| KST06MTF | onsemi | 1,270 | TRANS NPN 80V 0.5A SOT23-3 |
| KST06MTF-FS | onsemi | 30,422 | TRANS NPN 80V 0.5A SOT23-3 |
















