KST06MTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

RoHS Compliant

Weight :

30mg

Collector Emitter Breakdown Voltage :

80V

Base Part Number :

KST06

Transistor Type :

NPN

Max Collector Current :

500mA

Max Breakdown Voltage :

80V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Collector Emitter Voltage (VCEO) :

80V

hFE Min :

50

Emitter Base Voltage (VEBO) :

4V

Mount :

Surface Mount

Element Configuration :

Single

Collector Base Voltage (VCBO) :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2002

Frequency :

100MHz

Factory Lead Time :

6 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Terminal Position :

Dual

Current Rating :

500mA

Voltage - Rated DC :

80V

Number of Terminations :

3

Polarity/Channel Type :

NPN

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Width :

1.3mm

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Number of Elements :

1

Gain Bandwidth Product :

100MHz

Power Dissipation :

350mW

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V

Mounting Type :

Surface Mount

Height :

970μm

Transition Frequency :

100MHz

ECCN Code :

EAR99

Pbfree Code :

yes

Max Power Dissipation :

350mW

Radiation Hardening :

No

Transistor Element Material :

SILICON

Max Operating Temperature :

150°C

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100nA

Length :

2.9mm

Collector Emitter Saturation Voltage :

250mV