KSP56BU
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- Mfr.Part #
- KSP56BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A TO92-3
- Stock
- 30,432
- In Stock ：
- 30,432
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 50MHz
- Operating Temperature :
- 150°C TJ
- Supplier Device Package :
- TO-92-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Power - Max :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Packaging :
- Bulk
- Current - Collector (Ic) (Max) :
- 500mA
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- KSP56BU
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSP56BU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.The product comes in the supplier device package of TO-92-3.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.
KSP56BU Features
the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the supplier device package of TO-92-3
KSP56BU Applications
There are a lot of ON Semiconductor
KSP56BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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