KSP55TA
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- Mfr.Part #
- KSP55TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A TO92-3
- Stock
- 8,107
- In Stock ：
- 8,107
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -500mA
- hFE Min :
- 50
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- -4V
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Factory Lead Time :
- 16 Weeks
- Pbfree Code :
- yes
- Transition Frequency :
- 50MHz
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Transistor Type :
- PNP
- Published :
- 2007
- Max Breakdown Voltage :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Weight :
- 240mg
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Box (TB)
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- KSP55
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Power Dissipation :
- 625mW
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Element Configuration :
- Single
- Max Collector Current :
- 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA
- Frequency :
- 50MHz
- Voltage - Rated DC :
- -60V
- Gain Bandwidth Product :
- 50MHz
- Collector Emitter Saturation Voltage :
- -250mV
- Collector Base Voltage (VCBO) :
- -60V
- Datasheets
- KSP55TA
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP55TA Overview
This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -4V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
KSP55TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KSP55TA Applications
There are a lot of ON Semiconductor
KSP55TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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