KSP55TA
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- Mfr.Part #
- KSP55TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A TO92-3
- Stock
- 8,107
- In Stock ：
- 8,107
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 50
- Lead Free :
- Lead Free
- Base Part Number :
- KSP55
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Mount :
- Through Hole
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Power Dissipation :
- 625mW
- Published :
- 2007
- Max Power Dissipation :
- 625mW
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 16 Weeks
- Polarity/Channel Type :
- PNP
- Current Rating :
- -500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Collector Emitter Voltage (VCEO) :
- 60V
- Packaging :
- Tape and Box (TB)
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Max Collector Current :
- 500mA
- Collector Base Voltage (VCBO) :
- -60V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 50MHz
- Frequency :
- 50MHz
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Weight :
- 240mg
- Transistor Type :
- PNP
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 50MHz
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- -4V
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -60V
- Collector Emitter Saturation Voltage :
- -250mV
- Element Configuration :
- Single
- Datasheets
- KSP55TA
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP55TA Overview
This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -4V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
KSP55TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KSP55TA Applications
There are a lot of ON Semiconductor
KSP55TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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