KSP55TA
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- Mfr.Part #
- KSP55TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A TO92-3
- Stock
- 8,107
- In Stock ：
- 8,107
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Transition Frequency :
- 50MHz
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Base Part Number :
- KSP55
- Max Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Published :
- 2007
- Weight :
- 240mg
- Number of Terminations :
- 3
- Max Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -500mA
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 50MHz
- Power Dissipation :
- 625mW
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- hFE Min :
- 50
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 60V
- Factory Lead Time :
- 16 Weeks
- Number of Elements :
- 1
- Frequency :
- 50MHz
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- -4V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- -250mV
- Voltage - Rated DC :
- -60V
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -60V
- Mount :
- Through Hole
- Datasheets
- KSP55TA
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP55TA Overview
This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -4V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
KSP55TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KSP55TA Applications
There are a lot of ON Semiconductor
KSP55TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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