KSP55TA
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- Mfr.Part #
- KSP55TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A TO92-3
- Stock
- 8,107
- In Stock ：
- 8,107
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Current Rating :
- -500mA
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Packaging :
- Tape and Box (TB)
- Voltage - Rated DC :
- -60V
- Weight :
- 240mg
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- -250mV
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 60V
- hFE Min :
- 50
- Mount :
- Through Hole
- Max Breakdown Voltage :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Frequency :
- 50MHz
- Published :
- 2007
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Gain Bandwidth Product :
- 50MHz
- Max Collector Current :
- 500mA
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- Base Part Number :
- KSP55
- Factory Lead Time :
- 16 Weeks
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 625mW
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Transition Frequency :
- 50MHz
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- -60V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -4V
- Datasheets
- KSP55TA
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP55TA Overview
This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -4V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
KSP55TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KSP55TA Applications
There are a lot of ON Semiconductor
KSP55TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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