KSP55TA
- Mfr.Part #
- KSP55TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A TO92-3
- Stock
- 8,107
- In Stock :
- 8,107
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 60V
- Published :
- 2007
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -4V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Base Part Number :
- KSP55
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- hFE Min :
- 50
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Max Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Box (TB)
- Gain Bandwidth Product :
- 50MHz
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- -250mV
- Transistor Application :
- AMPLIFIER
- Frequency :
- 50MHz
- Current Rating :
- -500mA
- Voltage - Rated DC :
- -60V
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- -60V
- Factory Lead Time :
- 16 Weeks
- Max Power Dissipation :
- 625mW
- Weight :
- 240mg
- Transition Frequency :
- 50MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Datasheets
- KSP55TA

PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP55TA Overview
This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -4V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
KSP55TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KSP55TA Applications
There are a lot of ON Semiconductor
KSP55TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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