KSP55TA
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- Mfr.Part #
- KSP55TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A TO92-3
- Stock
- 8,107
- In Stock ：
- 8,107
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Collector Base Voltage (VCBO) :
- -60V
- Packaging :
- Tape and Box (TB)
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -250mV
- Max Breakdown Voltage :
- 60V
- Max Collector Current :
- 500mA
- Gain Bandwidth Product :
- 50MHz
- Current Rating :
- -500mA
- Frequency :
- 50MHz
- Voltage - Rated DC :
- -60V
- Factory Lead Time :
- 16 Weeks
- Transition Frequency :
- 50MHz
- Element Configuration :
- Single
- Mount :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 100nA
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 50
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 625mW
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- AMPLIFIER
- Published :
- 2007
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Base Part Number :
- KSP55
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- -4V
- Weight :
- 240mg
- Datasheets
- KSP55TA
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP55TA Overview
This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -4V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
KSP55TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KSP55TA Applications
There are a lot of ON Semiconductor
KSP55TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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