KSH45H11TF
- Mfr.Part #
- KSH45H11TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 80V 8A DPAK
- Stock
- 4,614
- In Stock :
- 4,614
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1.75W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Transition Frequency :
- 40MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 80V
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Breakdown Voltage :
- 80V
- Emitter Base Voltage (VEBO) :
- -5V
- Weight :
- 260.37mg
- Voltage - Rated DC :
- -80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 40MHz
- Base Part Number :
- KSH45H11
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Collector Cutoff (Max) :
- 10μA
- Number of Terminations :
- 2
- Frequency :
- 40MHz
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- -1V
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 8A
- Max Power Dissipation :
- 1.75W
- Collector Base Voltage (VCBO) :
- -80V
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- -8A
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- hFE Min :
- 60
- Lead Free :
- Lead Free
- Factory Lead Time :
- 9 Weeks
- Datasheets
- KSH45H11TF
KSH45H11TF Documents
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PNP 150°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH45H11TF Overview
DC current gain in this device equals 40 @ 4A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.As a result, the part has a transition frequency of 40MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 8A volts.
KSH45H11TF Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
KSH45H11TF Applications
There are a lot of ON Semiconductor
KSH45H11TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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