KSH45H11TF
- Mfr.Part #
- KSH45H11TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 80V 8A DPAK
- Stock
- 4,614
- In Stock :
- 4,614
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -80V
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10μA
- Terminal Form :
- Gull wing
- Max Collector Current :
- 8A
- Collector Emitter Voltage (VCEO) :
- 80V
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 40MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -1V
- RoHS Status :
- RoHS Compliant
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Max Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- -80V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Weight :
- 260.37mg
- Factory Lead Time :
- 9 Weeks
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transition Frequency :
- 40MHz
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Frequency :
- 40MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Power Dissipation :
- 1.75W
- Current Rating :
- -8A
- Max Power Dissipation :
- 1.75W
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- hFE Min :
- 60
- Base Part Number :
- KSH45H11
- Radiation Hardening :
- No
- Datasheets
- KSH45H11TF
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PNP 150°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH45H11TF Overview
DC current gain in this device equals 40 @ 4A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.As a result, the part has a transition frequency of 40MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 8A volts.
KSH45H11TF Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
KSH45H11TF Applications
There are a lot of ON Semiconductor
KSH45H11TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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