KSH44H11TF
- Mfr.Part #
- KSH44H11TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 80V 8A DPAK
- Stock
- 5,436
- In Stock :
- 5,436
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 1.75W
- Published :
- 2014
- Collector Emitter Breakdown Voltage :
- 80V
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Frequency :
- 50MHz
- Current Rating :
- 8A
- Base Part Number :
- KSH44H11
- Max Breakdown Voltage :
- 80V
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 6 Weeks
- JEDEC-95 Code :
- TO-252AA
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 260.37mg
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 50MHz
- Collector Emitter Saturation Voltage :
- 1V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Type :
- NPN
- hFE Min :
- 60
- Pbfree Code :
- yes
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Power Dissipation :
- 1.75W
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 80V
- Max Collector Current :
- 8A
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Transition Frequency :
- 50MHz
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 10μA
- Datasheets
- KSH44H11TF
,%20SC-63.jpg)
NPN 150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH44H11TF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.In the part, the transition frequency is 50MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 8A volts can be achieved.
KSH44H11TF Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz
KSH44H11TF Applications
There are a lot of ON Semiconductor
KSH44H11TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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