KSH45H11ITU
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- Mfr.Part #
- KSH45H11ITU
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 8A IPAK
- Stock
- 23,830
- In Stock ：
- 23,830
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Packaging :
- Tube
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- -5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.75W
- Gain Bandwidth Product :
- 40MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Height :
- 6.1mm
- Current Rating :
- -8A
- Width :
- 2.3mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- hFE Min :
- 60
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Frequency :
- 40MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Max Power Dissipation :
- 1.75W
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 40MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Collector Emitter Saturation Voltage :
- -1V
- Published :
- 2013
- Transistor Type :
- PNP
- Max Collector Current :
- 8A
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 10μA
- Lead Free :
- Lead Free
- Weight :
- 343.08mg
- Pbfree Code :
- yes
- Base Part Number :
- KSH45H11
- Voltage - Rated DC :
- -80V
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Factory Lead Time :
- 15 Weeks
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Length :
- 6.6mm
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- -80V
- Datasheets
- KSH45H11ITU
PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
KSH45H11ITU Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1V.A VCE saturation (Max) of 1V @ 400mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 40MHz.A maximum collector current of 8A volts is possible.
KSH45H11ITU Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
KSH45H11ITU Applications
There are a lot of ON Semiconductor
KSH45H11ITU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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