KSH42CTM
- Mfr.Part #
- KSH42CTM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 6A DPAK
- Stock
- 6,360
- In Stock :
- 6,360
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- -5V
- Power - Max :
- 20W
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Base Part Number :
- KSH42
- Power Dissipation :
- 1.75W
- Collector Base Voltage (VCBO) :
- -100V
- Factory Lead Time :
- 6 Weeks
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Max Breakdown Voltage :
- 100V
- Weight :
- 260.37mg
- Current - Collector Cutoff (Max) :
- 10μA
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 20W
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 100V
- Published :
- 2016
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Transition Frequency :
- 3MHz
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Max Collector Current :
- 6A
- Frequency :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 15
- Datasheets
- KSH42CTM
KSH42CTM Documents

PNP 150°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH42CTM Overview
DC current gain in this device equals 15 @ 3A 4V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 600mA, 6A.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 3MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 6A volts.
KSH42CTM Features
the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at -5V
a transition frequency of 3MHz
KSH42CTM Applications
There are a lot of ON Semiconductor
KSH42CTM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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