KSH42CTM
- Mfr.Part #
- KSH42CTM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 6A DPAK
- Stock
- 6,360
- In Stock :
- 6,360
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 3MHz
- Mounting Type :
- Surface Mount
- Base Part Number :
- KSH42
- Pbfree Code :
- yes
- Power - Max :
- 20W
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Emitter Base Voltage (VEBO) :
- -5V
- ECCN Code :
- EAR99
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 20W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Breakdown Voltage :
- 100V
- Collector Base Voltage (VCBO) :
- -100V
- hFE Min :
- 15
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Weight :
- 260.37mg
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 6A
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 10μA
- Published :
- 2016
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 3MHz
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 100V
- Factory Lead Time :
- 6 Weeks
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Power Dissipation :
- 1.75W
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Type :
- PNP
- Frequency :
- 3MHz
- Polarity/Channel Type :
- PNP
- Datasheets
- KSH42CTM
KSH42CTM Documents

PNP 150°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH42CTM Overview
DC current gain in this device equals 15 @ 3A 4V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 600mA, 6A.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 3MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 6A volts.
KSH42CTM Features
the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at -5V
a transition frequency of 3MHz
KSH42CTM Applications
There are a lot of ON Semiconductor
KSH42CTM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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