KSH29CTF
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- Mfr.Part #
- KSH29CTF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A DPAK
- Stock
- 7,175
- In Stock ：
- 7,175
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSH29
- Max Power Dissipation :
- 1.56W
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Published :
- 2002
- Weight :
- 260.37mg
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 100V
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 125mA, 1A
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50μA
- Transistor Element Material :
- SILICON
- Length :
- 6.6mm
- Transition Frequency :
- 3MHz
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 700mV
- Collector Emitter Voltage (VCEO) :
- 100V
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 2.3mm
- Max Collector Current :
- 1A
- Transistor Application :
- AMPLIFIER
- Frequency :
- 3MHz
- Terminal Form :
- Gull wing
- Current Rating :
- 1A
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Width :
- 6.1mm
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 100V
- Gain Bandwidth Product :
- 3MHz
- hFE Min :
- 15
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Factory Lead Time :
- 6 Weeks
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1.56W
- Voltage - Rated DC :
- 100V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Datasheets
- KSH29CTF
KSH29CTF Documents
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NPN 150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH29CTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 1A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 125mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 1A volts.
KSH29CTF Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
KSH29CTF Applications
There are a lot of ON Semiconductor
KSH29CTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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