KSH29CTF
- Mfr.Part #
- KSH29CTF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A DPAK
- Stock
- 7,175
- In Stock :
- 7,175
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 15
- Collector Emitter Voltage (VCEO) :
- 100V
- Height :
- 2.3mm
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Published :
- 2002
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 125mA, 1A
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Current Rating :
- 1A
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gain Bandwidth Product :
- 3MHz
- Length :
- 6.6mm
- Current - Collector Cutoff (Max) :
- 50μA
- Voltage - Rated DC :
- 100V
- Factory Lead Time :
- 6 Weeks
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- KSH29
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 700mV
- Max Collector Current :
- 1A
- Frequency :
- 3MHz
- Power Dissipation :
- 1.56W
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 100V
- Number of Terminations :
- 2
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Mounting Type :
- Surface Mount
- Width :
- 6.1mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1.56W
- Transistor Element Material :
- SILICON
- Weight :
- 260.37mg
- Datasheets
- KSH29CTF
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NPN 150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH29CTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 1A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 125mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 1A volts.
KSH29CTF Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
KSH29CTF Applications
There are a lot of ON Semiconductor
KSH29CTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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